@article{OZBEK2018291,

title = {3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications},

author = {Sefa \"{O}zbek and Golzar Alavi and Johannes Digel and Markus Gr\"{o}zing and Joachim N Burghartz and Manfred Berroth},

url = {http://www.sciencedirect.com/science/article/pii/S016792601730634X},

doi = {https://doi.org/10.1016/j.vlsi.2018.04.010},

issn = {0167-9260},

year  = {2018},

date = {2018-01-01},

journal = {Integration},

volume = {63},

pages = {291 - 298},

abstract = {This paper reports a transformer-based integrated class-A Differential Power Amplifier (DPA) for the Internet of Things (IoT) applications. The proposed 5\textendash6 GHz fully integrated differential PA is fabricated in a cost-effective 95 GHz-fmax, 0.25 μm SiGe BiCMOS technology (IHP process SGB25V). The amplifier utilizes a thin Si chip with a thickness of 45 μm in order to be embedded into flexible electronic foil systems. Several key RF performance parameters of the DPA with different substrate thicknesses are evaluated at the wafer level. The measurement results indicate that the DPA shows no significant S-parameters degradation due to the thickness differences. The measured gain center frequency is shifted about 300 MHz towards higher frequencies after thinning because of the image mirror currents within the conducting material at the backside of the chip. The DPA achieves 10.65 dB and 9.7 dB small-signal gain at 5.5 GHz before and after thinning, respectively. The PA delivers an output power of +9 dBm before and +8.1 dBm after thinning process at Pin = −1.3 dBm. The simulated 1 dB compression point occurs at +10.76 dBm output power with a PAE of 15%.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{JOSHI201887,

title = {Understanding the influence of in-plane gate electrode design on electrolyte gated transistor},

author = {Saumya Joshi and Vijay Deep Bhatt and Himanshi Rani and Markus Becherer and Paolo Lugli},

url = {http://www.sciencedirect.com/science/article/pii/S0167931718303630},

doi = {https://doi.org/10.1016/j.mee.2018.07.019},

issn = {0167-9317},

year  = {2018},

date = {2018-01-01},

journal = {Microelectronic Engineering},

volume = {199},

pages = {87 - 91},

abstract = {Present work investigates the influence of gate electrode design in performance of electrolyte-gated carbon nanotube transistors. Electrolyte gated transistors have a huge potential in biological and chemical sensing. Recently, in-plane gate electrode has replaced the earlier used gate electrode wire in these systems. It becomes extremely essential to investigate the impact of gate electrode design on the device properties, and to optimize the electrode design to harness maximum sensitivity and speed. As a part of this work we have investigated the impact of gate electrode area and the distance between the gate electrode and the channel on the transistor characteristics. Area of gate electrode scales almost linearly with the drain to source current. However, the dependence of the gate distance is highly affected by experimental factors. Random network of carbon nanotubes serve as the semicondutor channel for electrolyte gated field effect transistors under study.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Joshi2018b,

title = {Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor},

author = {Saumya Joshi and Vijay Deep Bhatt and Ewa Jaworska and Agata Michalska and Krzysztof Maksymiuk and Markus Becherer and Alessio Gagliardi and Paolo Lugli},

url = {https://doi.org/10.1038/s41598-018-29882-w},

issn = {2045-2322},

year  = {2018},

date = {2018-01-01},

journal = {Scientific Reports},

volume = {8},

number = {1},

pages = {11386--},

abstract = {In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{doi:10.1002/aelm.201800076,

title = {High-Mobility, Solution-Processed Organic Field-Effect Transistors from C8-BTBT:Polystyrene Blends},

author = {Katherina Haase and Cecilia Teixeira da Rocha and Christoph Hauenstein and Yichu Zheng and Mike Hambsch and Stefan C B Mannsfeld},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800076},

doi = {10.1002/aelm.201800076},

year  = {2018},

date = {2018-01-01},

journal = {Advanced Electronic Materials},

volume = {4},

number = {8},

pages = {1800076},

abstract = {Abstract Organic field-effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm2 V−1 s−1. This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field-effect transistors based on the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C8-BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear-coated devices with excellent device characteristics and gate-voltage-independent mobility values reaching 12 cm2 V−1 s−1 are shown, which are the highest reported values for C8-BTBT-based films prepared by a scalable, solution-based process.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{a11040037,

title = {Generalized Kinetic Monte Carlo Framework for Organic Electronics},

author = {Waldemar Kaiser and Johannes Popp and Michael Rinderle and Tim Albes and Alessio Gagliardi},

url = {https://www.mdpi.com/1999-4893/11/4/37},

doi = {10.3390/a11040037},

issn = {1999-4893},

year  = {2018},

date = {2018-01-01},

journal = {Algorithms},

volume = {11},

number = {4},

abstract = {In this paper, we present our generalized kinetic Monte Carlo (kMC) framework for the simulation of organic semiconductors and electronic devices such as solar cells (OSCs) and light-emitting diodes (OLEDs). Our model generalizes the geometrical representation of the multifaceted properties of the organic material by the use of a non-cubic, generalized Voronoi tessellation and a model that connects sites to polymer chains. Herewith, we obtain a realistic model for both amorphous and crystalline domains of small molecules and polymers. Furthermore, we generalize the excitonic processes and include triplet exciton dynamics, which allows an enhanced investigation of OSCs and OLEDs. We outline the developed methods of our generalized kMC framework and give two exemplary studies of electrical and optical properties inside an organic semiconductor.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{KlaukBurghartz2017,

title = {Parameter Uniformity of Submicron-Channel-Length Organic Thin-Film Transistors Fabricated by Stencil Lithography},

author = {U Zschieschang and F Letzkus and J N Burghartz and H Klauk},

doi = {10.1109/TNANO.2017.2655882},

issn = {1536-125X},

year  = {2017},

date = {2017-09-01},

journal = {IEEE Transactions on Nanotechnology},

volume = {16},

number = {5},

pages = {837-841},

abstract = {Using high-resolution stencil lithography, we have fabricated bottom-gate, top-contact (inverted staggered) organic thin-film transistors that have a channel length of 0.5 μm and gate-to-source and gate-to-drain overlaps of 2 μm. Owing to the small channel length, the transistors have a large width-normalized transconductance of (0.50 ± 0.05) S/m, despite the relatively small charge-carrier mobility of (0.36 ± 0.04) cm2/V · s. Across an array of 16 transistors, the uniformity of the transconductance is about 9% (1σ), the uniformity of the carrier mobility is about 7%, the uniformity of the threshold voltage is about 4%, the subthreshold slope varies between 95 and 150 mV/decade, and the on/off current ratio varies between 7 × 104 and 3 × 106. To our knowledge, this is the first time that the parameter distribution of submicron-channel-length organic TFTs is reported.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{7933216,

title = {Flexible Lactate and Glucose Sensors Using Electrolyte-Gated Carbon Nanotube Field Effect Transistor for Non-Invasive Real-Time Monitoring},

author = {S Joshi and V D Bhatt and H Wu and M Becherer and P Lugli},

doi = {10.1109/JSEN.2017.2707521},

issn = {1530-437X},

year  = {2017},

date = {2017-07-01},

journal = {IEEE Sensors Journal},

volume = {17},

number = {14},

pages = {4315-4321},

abstract = {We demonstrate flexible, low cost glucose and lactate sensors 

using novel enzyme immobilization scheme, primarily aimed toward 

wearable devices. The intrinsic chemical nature of polyimide films is 

harnessed to immobilize the enzyme on the polyimide substrate using a 

dicarboxylic acid. Sensors are fabricated using carbon nanotube as an 

active channel material. Minimum degradation of the transistor 

performance is seen after enzyme immobilization. The lowest 

concentration that can be resolved effectively is in pM range. The 

sensors demonstrate good sensing ability in the physiological range for 

wearable and implantable devices. The sensors were re-measured after 

three weeks and still retain their sensing ability with some decrease in 

the sensitivity. They also demonstrate good endurance against mechanical 

deformations.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{7843660,

title = {Metal-Free Fully Solution-Processable Flexible Electrolyte-Gated Carbon Nanotube Field Effect Transistor},

author = {V D Bhatt and S Joshi and P Lugli},

doi = {10.1109/TED.2017.2657882},

issn = {0018-9383},

year  = {2017},

date = {2017-03-01},

journal = {IEEE Transactions on Electron Devices},

volume = {64},

number = {3},

pages = {1375-1379},

abstract = {Carbon nanotube-based field effect transistors (CNTFETs) are 

an interesting alternative to organic FETs in the growing field of 

printed electronics. Solution processed CNTFETs can be fabricated at low 

temperatures, are compatible with roll to roll processes and with 

flexible substrates. Usually metal electrodes for CNTFETs are deposited 

using standard techniques (e.g., evaporation or sputtering) which 

require expensive equipment and a high thermal budget. The elimination 

of such deposition step would allow a fully solution-based process for 

the CNTFETs fabrication. In this paper, we demonstrate an all carbon 

nanotube (CNT) transistor which is entirely solution processable without 

sacrificing the device performance. Performed detailed contact 

resistance analysis shows that CNT electrodes make better contacts to 

semiconducting CNTs channel than gold electrodes. The device performance 

is shown for an electrolyte-gated CNTFET fabricated on a flexible 

substrate. Such transistors are used as low cost biosensors for vivo 

implants by exploiting better interaction of flexible substrates to 

cells.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{ZSCHIESCHANG2017179,

title = {Below-one-volt organic thin-film transistors with large on/off current ratios},

author = {Ute Zschieschang and Vera Patricia Bader and Hagen Klauk},

url = {http://www.sciencedirect.com/science/article/pii/S1566119917303026},

doi = {https://doi.org/10.1016/j.orgel.2017.06.045},

issn = {1566-1199},

year  = {2017},

date = {2017-01-01},

journal = {Organic Electronics},

volume = {49},

pages = {179 - 186},

abstract = {In many of the applications envisioned for organic thin-film transistors (TFTs), the electrical power will be supplied by small batteries or energy harvesters, which implies that it will be beneficial if the TFTs can be operated with voltages of 1 V or even below 1 V. At the same time, the TFTs should have large on/off current ratios, especially for applications in digital circuits and active matrices. Here we demonstrate p-channel and n-channel organic TFTs fabricated on a flexible plastic substrate that have a turn-on voltage of exactly 0 V, a subthreshold slope of 100 mV/decade, and an on/off current ratio of 2 × 105 when operated with gate-source voltages between 0 and 0.7 V. Complementary inverters fabricated using these TFTs have a small-signal gain of 90 and a minimum noise margin of 79% at a supply voltage of 0.7 V. Complementary ring oscillators can be operated with supply voltages as small as 0.4 V.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Chavarin2017.DOISTART,

title = {Current modulation of a heterojunction structure by an ultra-thin graphene base electrode},

author = {C A Chavarin and C Strobel and J Kitzmann and G Lupina and M Albert and J W Bartha and C Wenger},

year  = {2017},

date = {2017-01-01},

journal = {E-MRS Fall, Warsaw, Symposium S},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{aac317af45c340ff934c0c316df086e4,

title = {First Investigation of N-Doped Amorphous Silicon-Graphene Interfaces for Flexible High Frequency Heterojunction Transistors},

author = {C Strobel and C A Chavarin and J Kitzmann and G Lupina and C Wenger and M Albert and J W Bartha},

year  = {2017},

date = {2017-01-01},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{s17051147,

title = {Flexible, Low-Cost Sensor Based on Electrolyte Gated Carbon Nanotube Field Effect Transistor for Organo-Phosphate Detection},

author = {Vijay Deep Bhatt and Saumya Joshi and Markus Becherer and Paolo Lugli},

url = {http://www.mdpi.com/1424-8220/17/5/1147},

doi = {10.3390/s17051147},

issn = {1424-8220},

year  = {2017},

date = {2017-01-01},

journal = {Sensors},

volume = {17},

number = {5},

abstract = {A flexible enzymatic acetylcholinesterase biosensor based on an electrolyte-gated carbon nanotube field effect transistor is demonstrated. The enzyme immobilization is done on a planar gold gate electrode using 3-mercapto propionic acid as the linker molecule. The sensor showed good sensing capability as a sensor for the neurotransmitter acetylcholine, with a sensitivity of 5.7 μA/decade, and demonstrated excellent specificity when tested against interfering analytes present in the body. As the flexible sensor is supposed to suffer mechanical deformations, the endurance of the sensor was measured by putting it under extensive mechanical stress. The enzymatic activity was inhibited by more than 70% when the phosphate-buffered saline (PBS) buffer was spiked with 5 mg/mL malathion (an organophosphate) solution. The biosensor was successfully challenged with tap water and strawberry juice, demonstrating its usefulness as an analytical tool for organophosphate detection.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Klinger2017,

title = {Organic Power Electronics: Transistor Operation in the kA/cm2 Regime},

author = {Markus P Klinger and Axel Fischer and Felix Kaschura and Johannes Widmer and Bahman Kheradmand-Boroujeni and Frank Ellinger and Karl Leo},

url = {http://dx.doi.org/10.1038/srep44713},

year  = {2017},

date = {2017-01-01},

journal = {Scientific Reports},

volume = {7},

pages = {44713},

publisher = {The Author(s)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{C7NR02793A,

title = {High performance metal-insulator-graphene diodes for radio frequency power detection application},

author = {Mehrdad Shaygan and Zhenxing Wang and Mohamed Saeed Elsayed and Martin Otto and Giuseppe Iannaccone and Ahmed Hamed Ghareeb and Gianluca Fiori and Renato Negra and Daniel Neumaier},

url = {http://dx.doi.org/10.1039/C7NR02793A},

doi = {10.1039/C7NR02793A},

year  = {2017},

date = {2017-01-01},

journal = {Nanoscale},

volume = {9},

pages = {11944-11950},

publisher = {The Royal Society of Chemistry},

abstract = {Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm-2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V-1, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V W-1 at 2.4 GHz and 1.1 V W-1 at 49.4 GHz.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{doi:10.1063/1.4987147,

title = {Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes},

author = {C Strobel and C A Chavarin and J Kitzmann and G Lupina and Ch. Wenger and M Albert and J W Bartha},

url = {https://doi.org/10.1063/1.4987147},

doi = {10.1063/1.4987147},

year  = {2017},

date = {2017-01-01},

journal = {Journal of Applied Physics},

volume = {121},

number = {24},

pages = {245302},

abstract = {N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{7604130,

title = {Flexible In-Ga-Zn-O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study},

author = {G Cantarella and K Ishida and L Petti and N M\"{u}nzenrieder and T Meister and R Shabanpour and C Carta and F Ellinger and G Tr\"{o}ster and G A Salvatore},

doi = {10.1109/LED.2016.2619738},

issn = {0741-3106},

year  = {2016},

date = {2016-12-01},

journal = {IEEE Electron Device Letters},

volume = {37},

number = {12},

pages = {1582-1585},

abstract = {The quest for high-performance flexible circuits call for scaling of the minimum feature size in thin-film transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic computer-aided design simulations have guided the fabrication of high-performance flexible operational amplifiers (opamps) and logic circuits based on indium-gallium-zinc-oxide TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections have been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50-μm-thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5-mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gain-bandwidth-product increased by 16.9%, for the first one, and propagation delay (tpd) decreased by 43%, for the latter one.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Chavarin2016.DOISTART,

title = {Structural and electrical characterization of a-Si:H/graphene interfaces grown by VHF PECVD},

author = {C A Chavarin and C Strobel and J Kitzmann and G Lupina and C Wenger and M Albert and J W Bartha},

year  = {2016},

date = {2016-01-01},

journal = {E-MRS Fall, Warsaw, Symposium C},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Grundmann2016a,

title = {Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition},

author = {Sofie Bitter and Peter Schlupp and Michael Bonholzer and Holger von Wenckstern and Marius Grundmann},

url = {http://dx.doi.org/10.1021/acscombsci.5b00179},

doi = {10.1021/acscombsci.5b00179},

year  = {2016},

date = {2016-01-01},

journal = {ACS Combinatorial Science},

volume = {18},

number = {4},

pages = {188-194},

abstract = {Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08\textendash0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm2 glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 1020 to 1016 cm\textendash3 by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).},

note = {PMID: 27004935},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Grundmann2016b,

title = {Oxide bipolar electronics: materials, devices and circuits},

author = {Marius Grundmann and Fabian Kl\"{u}pfel and Robert Karsthof and Peter Schlupp and Friedrich-Leonhard Schein and Daniel Splith and Chang Yang and Sofie Bitter and Holger von Wenckstern},

url = {http://stacks.iop.org/0022-3727/49/i=21/a=213001},

year  = {2016},

date = {2016-01-01},

journal = {Journal of Physics D: Applied Physics},

volume = {49},

number = {21},

pages = {213001},

publisher = {IOP Publishing},

abstract = {We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Grundmann2016bb,

title = {Ring Oscillators Based on ZnO Channel JFETs and MESFETs},

author = {Fabian J Kl\"{u}pfel and Holger von Wenckstern and Marius Grundmann},

url = {http://dx.doi.org/10.1002/aelm.201500431},

doi = {10.1002/aelm.201500431},

issn = {2199-160X},

year  = {2016},

date = {2016-01-01},

journal = {Advanced Electronic Materials},

volume = {2},

number = {7},

pages = {1500431--n/a},

publisher = {Wiley Online Library},

abstract = {Ring oscillator circuits based on junction field-effect transistors as well as metal\textendashsemiconductor field-effect transistors with ZnO channels are presented. Single stage delay times down to 110 ns are observed. The experimental oscillation frequencies are related to easily measurable device properties by a simple analytical model. This work proves the feasibility of low power oxide based circuits with Schottky diode and bipolar (pn-) diode gates since both approaches provide significantly lower operation voltages at similar frequencies compared to previously reported oxide thin film transistors based on insulating gates.},

note = {1500431},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{BarthaWenger2016,

title = {Plasma-enhanced chemical vapor deposition of amorphous Si on graphene},

author = {G Lupina and C Strobel and J Dabrowski and G Lippert and J Kitzmann and H M Krause and C Wenger and M Lukosius and A Wolff and M Albert and J W Bartha},

url = {http://dx.doi.org/10.1063/1.4948978},

doi = {10.1063/1.4948978},

year  = {2016},

date = {2016-01-01},

journal = {Applied Physics Letters},

volume = {108},

number = {19},

pages = {193105},

publisher = {AIP Publishing},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{doi:10.1063/1.4953034,

title = {Metal oxide semiconductor thin-film transistors for flexible electronics},

author = {Luisa Petti and Niko M\"{u}nzenrieder and Christian Vogt and Hendrik Faber and Lars B\"{u}the and Giuseppe Cantarella and Francesca Bottacchi and Thomas D Anthopoulos and Gerhard Tr\"{o}ster},

url = {https://doi.org/10.1063/1.4953034},

doi = {10.1063/1.4953034},

year  = {2016},

date = {2016-01-01},

journal = {Applied Physics Reviews},

volume = {3},

number = {2},

pages = {021303},

abstract = {The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Neumaier2016a,

title = {Encapsulated graphene-based Hall sensors on foil with increased sensitivity},

author = {Zhenxing Wang and Luca Banszerus and Martin Otto and Kenji Watanabe and Takashi Taniguchi and Christoph Stampfer and Daniel Neumaier},

url = {http://dx.doi.org/10.1002/pssb.201600224},

doi = {10.1002/pssb.201600224},

issn = {1521-3951},

year  = {2016},

date = {2016-01-01},

journal = {physica status solidi (b)},

volume = {253},

number = {12},

pages = {2316--2320},

publisher = {Wiley Online Library},

abstract = {The encapsulation of graphene-based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT, respectively, which are the highest reported sensitivity values for Hall sensors on foil so far.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Neumaier2016b,

title = {Flexible Hall sensors based on graphene},

author = {Zhenxing Wang and Mehrdad Shaygan and Martin Otto and Daniel Schall and Daniel Neumaier},

url = {http://dx.doi.org/10.1039/C5NR08729E},

doi = {10.1039/C5NR08729E},

year  = {2016},

date = {2016-01-01},

journal = {Nanoscale},

volume = {8},

pages = {7683-7687},

publisher = {The Royal Society of Chemistry},

abstract = {The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 [small mu ]m thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. Voltage and current normalized sensitivities of up to 0.096 V VT-1 and 79 V AT-1 were measured, respectively. These values are comparable to the sensitivity of rigid silicon based Hall sensors and are the highest values reported so far for any flexible Hall sensor devices. The sensitivity of the Hall sensor shows no degradation after being bent to a minimum radius of 4 mm, which corresponds to a tensile strain of 0.6%, and after 1000 bending cycles to a radius of 5 mm.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}