2019 |
|
Meister, T; Ishida, K; Knobelspies, S; Cantarella, G; Münzenrieder, N; Tröster, G; Carta, C; Ellinger, F 5–31-Hz 188-µW Light-Sensing Oscillator With Two Active Inductors Fully Integrated on Plastic Artikel IEEE Journal of Solid-State Circuits, 54 (8), S. 2195-2206, 2019, ISSN: 0018-9200. @article{8721229,
title = {5\textendash31-Hz 188-µW Light-Sensing Oscillator With Two Active Inductors Fully Integrated on Plastic}, author = {T Meister and K Ishida and S Knobelspies and G Cantarella and N M\“{u}nzenrieder and G Tr\“{o}ster and C Carta and F Ellinger}, doi = {10.1109/JSSC.2019.2914405}, issn = {0018-9200}, year = {2019}, date = {2019-08-01}, journal = {IEEE Journal of Solid-State Circuits}, volume = {54}, number = {8}, pages = {2195-2206}, abstract = {We present a low-power low-frequency oscillator that is fully integrated on a bendable plastic substrate using amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Its purpose is the duty cycling of components of a wireless sensor tag to realize power savings. In addition, the oscillator can directly be used as a light sensor. It oscillates between 5 Hz in the dark and 31 Hz under daylight, from a 5-V supply voltage. The measured light-sensitivity of the oscillation frequency is between 7.4 Hz/klx in the dark and around 1.7 Hz/klx in daylight. On average, the frequency of oscillation changes by 58 %/klx. The required power is 188 $mu textW$ . The presented design is a combination of the inductance\textendashcapacitance cross-coupled oscillator structure and two single-transistor active inductors, which enable high gain at low power levels in a small chip area. We analyze the circuit and derive design guidelines for minimizing the oscillation frequency, circuit area, and power consumption. Finally, we report the measurements including jitter and deduce implications for the accuracy of light measurements.}, keywords = {}, pubstate = {published}, tppubtype = {article} } We present a low-power low-frequency oscillator that is fully integrated on a bendable plastic substrate using amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Its purpose is the duty cycling of components of a wireless sensor tag to realize power savings. In addition, the oscillator can directly be used as a light sensor. It oscillates between 5 Hz in the dark and 31 Hz under daylight, from a 5-V supply voltage. The measured light-sensitivity of the oscillation frequency is between 7.4 Hz/klx in the dark and around 1.7 Hz/klx in daylight. On average, the frequency of oscillation changes by 58 %/klx. The required power is 188 $mu textW$ . The presented design is a combination of the inductance–capacitance cross-coupled oscillator structure and two single-transistor active inductors, which enable high gain at low power levels in a small chip area. We analyze the circuit and derive design guidelines for minimizing the oscillation frequency, circuit area, and power consumption. Finally, we report the measurements including jitter and deduce implications for the accuracy of light measurements.
|
|
Lahr, O; Zhang, Z; Grotjahn, F; Schlupp, P; Vogt, S; von Wenckstern, H; Thiede, A; Grundmann, M Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs Artikel IEEE Transactions on Electron Devices, 66 (8), S. 3376-3381, 2019, ISSN: 0018-9383. @article{8750804,
title = {Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}, author = {O Lahr and Z Zhang and F Grotjahn and P Schlupp and S Vogt and H von Wenckstern and A Thiede and M Grundmann}, doi = {10.1109/TED.2019.2922696}, issn = {0018-9383}, year = {2019}, date = {2019-08-01}, journal = {IEEE Transactions on Electron Devices}, volume = {66}, number = {8}, pages = {3376-3381}, abstract = {Metal\textendashsemiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc\textendashtin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm2/Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Metal–semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc–tin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm2/Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators.
|
|
Münzenrieder, N; Costa, J; Petti, L; Cantarella, G; Meister, T; Ishida, K; Carta, C; Ellinger, F Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs Inproceedings 2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), S. 1-3, 2019. @inproceedings{8792264,
title = {Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs}, author = {N M\“{u}nzenrieder and J Costa and L Petti and G Cantarella and T Meister and K Ishida and C Carta and F Ellinger}, doi = {10.1109/FLEPS.2019.8792264}, year = {2019}, date = {2019-07-01}, booktitle = {2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, pages = {1-3}, abstract = {A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 μm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 μm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.
|
|
Kalita, U; Tueckmantel, C; Riedl, T; Pfeiffer, U Evaluation of the Beyond- fT Operation of an IGZO TFT-Based RF Self-Mixing Circuit Artikel IEEE Microwave and Wireless Components Letters, 29 (2), S. 119-121, 2019, ISSN: 1531-1309. @article{8586929,
title = {Evaluation of the Beyond- fT Operation of an IGZO TFT-Based RF Self-Mixing Circuit}, author = {U Kalita and C Tueckmantel and T Riedl and U Pfeiffer}, doi = {10.1109/LMWC.2018.2886068}, issn = {1531-1309}, year = {2019}, date = {2019-02-01}, journal = {IEEE Microwave and Wireless Components Letters}, volume = {29}, number = {2}, pages = {119-121}, abstract = {The objective of this letter is to show the potential of amorphous indium gallium zinc oxide (IGZO) thin-film transistors (TFT) for designing radio frequency (RF) communication systems operating in the gigahertz regime. For that purpose, the self-mixing operation of in-house fabricated IGZO-TFTs beyond their transit frequency (fT) is reported. The bottom-gate, top-contact TFTs have an fT of 40 MHz including the device interconnects. A differential RF self-mixing circuit was fabricated to act as an RF detector and frequency doubler. The detector shows a peak voltage responsivity (RV) and a minimum noise equivalent power of 445 V/W and 0.1 nW/√(Hz) at 50 MHz and 2 V/W and 30 nW/√(Hz) at 1 GHz, respectively, at a chopping frequency of 28 kHz. As a frequency doubler, the circuit can generate a second-harmonic output voltage up to -36 dBV for an 8-dBV RF input voltage at 100 MHz.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The objective of this letter is to show the potential of amorphous indium gallium zinc oxide (IGZO) thin-film transistors (TFT) for designing radio frequency (RF) communication systems operating in the gigahertz regime. For that purpose, the self-mixing operation of in-house fabricated IGZO-TFTs beyond their transit frequency (fT) is reported. The bottom-gate, top-contact TFTs have an fT of 40 MHz including the device interconnects. A differential RF self-mixing circuit was fabricated to act as an RF detector and frequency doubler. The detector shows a peak voltage responsivity (RV) and a minimum noise equivalent power of 445 V/W and 0.1 nW/√(Hz) at 50 MHz and 2 V/W and 30 nW/√(Hz) at 1 GHz, respectively, at a chopping frequency of 28 kHz. As a frequency doubler, the circuit can generate a second-harmonic output voltage up to -36 dBV for an 8-dBV RF input voltage at 100 MHz.
|
|
Burghartz, J N; Alavi, G; Albrecht, B; Deuble, T; Elsobky, M; Ferwana, S; Harendt, C; Mahsereci, Y; Richter, H; Yu, Z Hybrid Systems-in-Foil -Combining the Merits of Thin Chips and of Large-Area Electronics Artikel IEEE Journal of the Electron Devices Society, S. 1-1, 2019, ISSN: 2168-6734. @article{8629997,
title = {Hybrid Systems-in-Foil -Combining the Merits of Thin Chips and of Large-Area Electronics}, author = {J N Burghartz and G Alavi and B Albrecht and T Deuble and M Elsobky and S Ferwana and C Harendt and Y Mahsereci and H Richter and Z Yu}, doi = {10.1109/JEDS.2019.2896188}, issn = {2168-6734}, year = {2019}, date = {2019-01-01}, journal = {IEEE Journal of the Electron Devices Society}, pages = {1-1}, abstract = {This paper reports on the status of a comprehensive ten-year research and development effort towards Hybrid System-in-Foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electronic component implementation are combined in a complementary fashion in and on a flexible carrier substrate. HySiF paves the way to entirely new applications of electronic products where form factor, form adaptivity and form flexibility are key enablers. In this review paper the various aspects of thin-chip fabrication and embedding, device and circuit design under impact of unknown or variable mechanical stress, and the on-and off-chip implementation of sensor, actuator, microwave and energy supply components are addressed.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper reports on the status of a comprehensive ten-year research and development effort towards Hybrid System-in-Foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electronic component implementation are combined in a complementary fashion in and on a flexible carrier substrate. HySiF paves the way to entirely new applications of electronic products where form factor, form adaptivity and form flexibility are key enablers. In this review paper the various aspects of thin-chip fabrication and embedding, device and circuit design under impact of unknown or variable mechanical stress, and the on-and off-chip implementation of sensor, actuator, microwave and energy supply components are addressed.
|
|
Hehn, M; Sippel, E; Carlowitz, C; Vossiek, M High-Accuracy Localization and Calibration for 5-DoF Indoor Magnetic Positioning Systems Artikel IEEE Transactions on Instrumentation and Measurement, S. 1-11, 2019, ISSN: 0018-9456. @article{8574943,
title = {High-Accuracy Localization and Calibration for 5-DoF Indoor Magnetic Positioning Systems}, author = {M Hehn and E Sippel and C Carlowitz and M Vossiek}, doi = {10.1109/TIM.2018.2884040}, issn = {0018-9456}, year = {2019}, date = {2019-01-01}, journal = {IEEE Transactions on Instrumentation and Measurement}, pages = {1-11}, abstract = {Magnetic local positioning systems are a well-suited candidate for reliable indoor positioning systems, as they are robust against blocking by dielectric materials like walls or people. The system presented in this paper is implemented with a one-axis magnetic transmitter and several three-axis field sensors connected to a complete sensor network. Unfortunately, the performance of the system is severely impaired by field sensor nonidealities such as magnetic coupling of the sensor coils, coil misalignment, field sensor rotation, and unsynchronized sampling. In this paper, the overall field sensor impairments and an additive Gaussian noise model superposing the magnetic field are mathematically described. Then, a novel calibration scheme for the overall field sensor nonidealities is presented. Furthermore, a statistically optimal localization procedure coping with the field sensor nonidealities is developed. The proposed novel localization and calibration algorithms are demonstrated in a common office environment with a size of 7 m x 5 m x 3 m. Thereby, the calibration impressively reduces the position root-mean-square error (RMSE) from 46.8 to 10.6 cm and the angle RMSE from 24.8° to 6.1°.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Magnetic local positioning systems are a well-suited candidate for reliable indoor positioning systems, as they are robust against blocking by dielectric materials like walls or people. The system presented in this paper is implemented with a one-axis magnetic transmitter and several three-axis field sensors connected to a complete sensor network. Unfortunately, the performance of the system is severely impaired by field sensor nonidealities such as magnetic coupling of the sensor coils, coil misalignment, field sensor rotation, and unsynchronized sampling. In this paper, the overall field sensor impairments and an additive Gaussian noise model superposing the magnetic field are mathematically described. Then, a novel calibration scheme for the overall field sensor nonidealities is presented. Furthermore, a statistically optimal localization procedure coping with the field sensor nonidealities is developed. The proposed novel localization and calibration algorithms are demonstrated in a common office environment with a size of 7 m x 5 m x 3 m. Thereby, the calibration impressively reduces the position root-mean-square error (RMSE) from 46.8 to 10.6 cm and the angle RMSE from 24.8° to 6.1°.
|
|
Haase, Katherina; Zessin, Jakob; Zoumboulis, Konstantinos; Müller, Markus; Hambsch, Mike; Mannsfeld, Stefan C B Solution Shearing of a High-Capacitance Polymer Dielectric for Low-Voltage Organic Transistors Artikel Advanced Electronic Materials, 5 (6), S. 1900067, 2019. @article{doi:10.1002/aelm.201900067,
title = {Solution Shearing of a High-Capacitance Polymer Dielectric for Low-Voltage Organic Transistors}, author = {Katherina Haase and Jakob Zessin and Konstantinos Zoumboulis and Markus M\“{u}ller and Mike Hambsch and Stefan C B Mannsfeld}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201900067}, doi = {10.1002/aelm.201900067}, year = {2019}, date = {2019-01-01}, journal = {Advanced Electronic Materials}, volume = {5}, number = {6}, pages = {1900067}, abstract = {Abstract With the prospect of realizing innovative technologies by large-area fabrication at low cost and high throughput, printing and coating technologies are being intensively researched for the deposition of functional films. One promising coating technology is solution shearing, which has been studied as a deposition technique for organic semiconductors but not to a greater extent for dielectric layers. Therefore, the deposition by solution shearing of high-quality poly(4-vinylphenol) dielectrics is investigated, and the utility of these films as ultra-smooth dielectric substrates for transistors is demonstrated. By comparing these films to those prepared by spin-coating, it is possible to highlight the advantages of the technique. Specifically, thinner films with thicknesses as low as 11.4 nm but still low leakage and almost identical surface properties can be achieved. Thus, dielectric films with a very high capacitance of 280 nF cm-2 are realized in a single coating step. Probing these films within organic transistors shows that they can facilitate operation at voltages as low as -1 V. Finally, it is shown how the use of a polymer-small-molecule\textendashsemiconductor blend can pave the way toward high-performance, ultra-low-voltage devices from solution.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract With the prospect of realizing innovative technologies by large-area fabrication at low cost and high throughput, printing and coating technologies are being intensively researched for the deposition of functional films. One promising coating technology is solution shearing, which has been studied as a deposition technique for organic semiconductors but not to a greater extent for dielectric layers. Therefore, the deposition by solution shearing of high-quality poly(4-vinylphenol) dielectrics is investigated, and the utility of these films as ultra-smooth dielectric substrates for transistors is demonstrated. By comparing these films to those prepared by spin-coating, it is possible to highlight the advantages of the technique. Specifically, thinner films with thicknesses as low as 11.4 nm but still low leakage and almost identical surface properties can be achieved. Thus, dielectric films with a very high capacitance of 280 nF cm-2 are realized in a single coating step. Probing these films within organic transistors shows that they can facilitate operation at voltages as low as -1 V. Finally, it is shown how the use of a polymer-small-molecule–semiconductor blend can pave the way toward high-performance, ultra-low-voltage devices from solution.
|
|
Popp, Johannes; Kaiser, Waldemar; Gagliardi, Alessio Advanced Theory and Simulations, 2 (1), S. 1800114, 2019. @article{doi:10.1002/adts.201800114,
title = {Impact of Phosphorescent Sensitizers and Morphology on the Photovoltaic Performance in Organic Solar Cells}, author = {Johannes Popp and Waldemar Kaiser and Alessio Gagliardi}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adts.201800114}, doi = {10.1002/adts.201800114}, year = {2019}, date = {2019-01-01}, journal = {Advanced Theory and Simulations}, volume = {2}, number = {1}, pages = {1800114}, abstract = {Abstract Phosphorescent sensitizers (PSs) are considered as a promising alternative for increasing the internal quantum efficiency (IQE) in organic solar cells (OSCs). By converting short-lifetime singlet into long-living triplet excitons, enhanced exciton diffusion and dissociation have been reported previously. However, only a limited increase in the OSC performance has been achieved. In this work, the interplay of the PS with both singlet and triplet excitons within organic blends is examined using kinetic Monte Carlo simulations including a comprehensive model of excitonic processes. Different morphologies of the conventional P3HT:PCBM solar cell are simulated, and the excitonic properties and their influence on the photovoltaic performance under doping are studied. The use of phosphorescent sensitization ensures high intersystem crossing and enlarges the diffusion length. An increase in the IQE of 34% is observed for a bilayer OSC. The increasing decay of triplets in proximity to the PS due to a strong spin-orbit coupling limits the IQE. Unlike expected, triplet-triplet annihilation does not provide a significant loss of excitons. A doped planar-mixed molecular heterojunction outperforms an undoped bulk-heterojunction OSC due to the enhanced exciton diffusion. A further study of optimal PS parameters predicts an increase in the IQE within bilayer solar cells by about 100%.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract Phosphorescent sensitizers (PSs) are considered as a promising alternative for increasing the internal quantum efficiency (IQE) in organic solar cells (OSCs). By converting short-lifetime singlet into long-living triplet excitons, enhanced exciton diffusion and dissociation have been reported previously. However, only a limited increase in the OSC performance has been achieved. In this work, the interplay of the PS with both singlet and triplet excitons within organic blends is examined using kinetic Monte Carlo simulations including a comprehensive model of excitonic processes. Different morphologies of the conventional P3HT:PCBM solar cell are simulated, and the excitonic properties and their influence on the photovoltaic performance under doping are studied. The use of phosphorescent sensitization ensures high intersystem crossing and enlarges the diffusion length. An increase in the IQE of 34% is observed for a bilayer OSC. The increasing decay of triplets in proximity to the PS due to a strong spin-orbit coupling limits the IQE. Unlike expected, triplet-triplet annihilation does not provide a significant loss of excitons. A doped planar-mixed molecular heterojunction outperforms an undoped bulk-heterojunction OSC due to the enhanced exciton diffusion. A further study of optimal PS parameters predicts an increase in the IQE within bilayer solar cells by about 100%.
|
|
Münzenrieder, Niko; Cantarella, Giuseppe; Petti, Luisa Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors Artikel ECS Transactions, 90 (1), S. 55-63, 2019. @article{M\“{u}nzenrieder30042019,
title = {Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors}, author = {Niko M\“{u}nzenrieder and Giuseppe Cantarella and Luisa Petti}, url = {http://ecst.ecsdl.org/content/90/1/55.abstract}, doi = {10.1149/09001.0055ecst}, year = {2019}, date = {2019-01-01}, journal = {ECS Transactions}, volume = {90}, number = {1}, pages = {55-63}, abstract = {The internet of things or foldable phones call for a variety of flexible sensor conditioning and transceiver circuits. However, the realization of high-performance, large-area, and deformable analog circuits is limited by the materials and the processes compatible with mechanically flexible substrates. Among the different semiconductors, InGaZnO is one of the most promising materials to realize high-frequency flexible thin-film transistors (TFTs) and circuits. In this work, the effect of different geometries, including self-aligned, vertical, and double-gate structures on the AC behaviour of flexible IGZO TFTs is presented. All TFTs are based on Al2O3 insulating layers, InGaZnO semiconductor, and polyimide substrates. The presented TFTs exhibit state-of-the-art performance including a field-effect mobility up to 15 cm2/Vs and a mechanical bendability down to radii of 3.5 mm. Due to different trade-offs required in the fabrication, flexible IGZO TFTs with the shortest channel length of 160 nm do not exhibit the highest measured frequency, whereas exceptional maximum oscillation and transit frequencies of 304 MHz and 135 MHz are demonstrated for 500 nm long self-aligned TFTs. Such optimized transistors can be used to realize entirely flexible analog circuits leading towards imperceptible electronic systems.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The internet of things or foldable phones call for a variety of flexible sensor conditioning and transceiver circuits. However, the realization of high-performance, large-area, and deformable analog circuits is limited by the materials and the processes compatible with mechanically flexible substrates. Among the different semiconductors, InGaZnO is one of the most promising materials to realize high-frequency flexible thin-film transistors (TFTs) and circuits. In this work, the effect of different geometries, including self-aligned, vertical, and double-gate structures on the AC behaviour of flexible IGZO TFTs is presented. All TFTs are based on Al2O3 insulating layers, InGaZnO semiconductor, and polyimide substrates. The presented TFTs exhibit state-of-the-art performance including a field-effect mobility up to 15 cm2/Vs and a mechanical bendability down to radii of 3.5 mm. Due to different trade-offs required in the fabrication, flexible IGZO TFTs with the shortest channel length of 160 nm do not exhibit the highest measured frequency, whereas exceptional maximum oscillation and transit frequencies of 304 MHz and 135 MHz are demonstrated for 500 nm long self-aligned TFTs. Such optimized transistors can be used to realize entirely flexible analog circuits leading towards imperceptible electronic systems.
|
2018 |
|
Chavarin, Carlos A; Strobel, Carsten; Kitzmann, Julia; Lukosius, Mindaugas; Albert, Matthias; Leszczynska, Barbara; Leszczynski, Sebastian S; Bartha, Johann W; Wenger, Christian A Flexible Approach Towards Silicon-Graphene Heterojunction Transistors Inproceedings 2018 48th European Microwave Conference (EuMC), S. 729–732, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). @inproceedings{MC182535,
title = {A Flexible Approach Towards Silicon-Graphene Heterojunction Transistors}, author = {Carlos A Chavarin and Carsten Strobel and Julia Kitzmann and Mindaugas Lukosius and Matthias Albert and Barbara Leszczynska and Sebastian S Leszczynski and Johann W Bartha and Christian Wenger}, url = {https://www.eumwa.org/knowledge-center/EUMW2018/EUMC2018/MC182535.PDF}, year = {2018}, date = {2018-09-01}, booktitle = {2018 48th European Microwave Conference (EuMC)}, pages = {729–732}, abstract = {The graphene-base heterojunction transistor (GBHT) is an attractive device concept to reach THz operation frequencies. The novel transistor consists of two n-doped silicon layers with a graphene monolayer in between. The structure of the device is similar to an n-p-n bipolar transistor with the base being replaced by graphene. In this work, the current state of GBHT development at TU-Dresden/IHP will be presented. First, the innovative non-destructive deposition technology for n-a-Si:H on graphene will be highlighted. Next, the successful control of the graphene/ silicon interfaces is described. Up to now, highly rectifying Schottky diodes (ION/IOFF 104 – 105, +/- 1V) have been achieved for both the BE and BC graphene-silicon interface. Finally, first GBHT prototypes were prepared and analyzed. It is verified, that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage.}, note = {EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } The graphene-base heterojunction transistor
(GBHT) is an attractive device concept to reach THz operation frequencies. The novel transistor consists of two n-doped silicon layers with a graphene monolayer in between. The structure of the device is similar to an n-p-n bipolar transistor with the base being replaced by graphene. In this work, the current state of GBHT development at TU-Dresden/IHP will be presented. First, the innovative non-destructive deposition technology for n-a-Si:H on graphene will be highlighted. Next, the successful control of the graphene/ silicon interfaces is described. Up to now, highly rectifying Schottky diodes (ION/IOFF 104 – 105, +/- 1V) have been achieved for both the BE and BC graphene-silicon interface. Finally, first GBHT prototypes were prepared and analyzed. It is verified, that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. |
|
Dudek, Damian; Ellinger, Frank Fundamental Science in RF-Engineering and Funding Opportunities in Germany — The Role of the German Research Foundation in Inproceedings 2018 48th European Microwave Conference (EuMC), S. 728, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). @inproceedings{MC182525,
title = {Fundamental Science in RF-Engineering and Funding Opportunities in Germany — The Role of the German Research Foundation in }, author = {Damian Dudek and Frank Ellinger}, url = {https://www.eumwa.org/knowledge-center/EUMW2018/EUMC2018/MC182525.PDF}, year = {2018}, date = {2018-09-01}, booktitle = {2018 48th European Microwave Conference (EuMC)}, pages = {728}, abstract = {How to push the ideas in RF-engineering into topics of fundamental science? In this contribution I will focus on the very beginning of guiding the intellectual expertise of researchers to strength interdisciplinary research topics. The interdisciplinary work between researchers coming from various fields like engineering, biology, physics, medicine or others can lead to an unexpected added value. It is difficult to put measures on the outcomes in such new setting of interdisciplinary research consortia as in most cases a common language must be defined. In such circumstances one cannot assume to have a strong publication record even in the first two years of funding and cooperation. However, a good measure in basic science is the publication record and the impact of such a work. To ensure a high quality research work one should take a careful look on the time scales and allow researchers to submit their results in high impact journals. Another point of delay in publishing might be a complex and time-consuming experimental set-up or infrastructure, which is sometimes crucial and important to move a certain research field forward. One aspect of my presentation will be on adapting these parameters for a six year funding on the funding instrument called priority programme at the German Research Foundation. Along the example of “High Frequency Flexible Bendable Electronics for Wireless Communication Systems” I will show how to bring researchers together and try to shape an adequate funding programme including all relevant aspects of research with the needed focus on the added value. Adaptive, flexible and energy efficient organic electronics is a perfect platform to show how future engineering transforms our actual life and society.}, note = {EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } How to push the ideas in RF-engineering into
topics of fundamental science? In this contribution I will focus on the very beginning of guiding the intellectual expertise of researchers to strength interdisciplinary research topics. The interdisciplinary work between researchers coming from various fields like engineering, biology, physics, medicine or others can lead to an unexpected added value. It is difficult to put measures on the outcomes in such new setting of interdisciplinary research consortia as in most cases a common language must be defined. In such circumstances one cannot assume to have a strong publication record even in the first two years of funding and cooperation. However, a good measure in basic science is the publication record and the impact of such a work. To ensure a high quality research work one should take a careful look on the time scales and allow researchers to submit their results in high impact journals. Another point of delay in publishing might be a complex and time-consuming experimental set-up or infrastructure, which is sometimes crucial and important to move a certain research field forward. One aspect of my presentation will be on adapting these parameters for a six year funding on the funding instrument called priority programme at the German Research Foundation. Along the example of “High Frequency Flexible Bendable Electronics for Wireless Communication Systems” I will show how to bring researchers together and try to shape an adequate funding programme including all relevant aspects of research with the needed focus on the added value. Adaptive, flexible and energy efficient organic electronics is a perfect platform to show how future engineering transforms our actual life and society. |
|
Fan, Chun-Yu; Wei, Muh-Dey; Saeed, Mohamed; Hamed, Ahmed; Negra, Renato; Wang, Zhenxing; Shaygan, Mehrdad; Neumaier, Daniel Study of Graphene Flexible Electronics for Microwave Application Inproceedings 2018 48th European Microwave Conference (EuMC), S. 733–736, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). @inproceedings{MC182536,
title = {Study of Graphene Flexible Electronics for Microwave Application}, author = {Chun-Yu Fan and Muh-Dey Wei and Mohamed Saeed and Ahmed Hamed and Renato Negra and Zhenxing Wang and Mehrdad Shaygan and Daniel Neumaier}, url = {https://www.eumwa.org/knowledge-center/EUMW2018/EUMC2018/MC182536.PDF}, year = {2018}, date = {2018-09-01}, booktitle = {2018 48th European Microwave Conference (EuMC)}, pages = {733–736}, abstract = {This paper presents the components and the design of a microwave receiver frontend based on CVD-grown graphene on a flexible substrate. For the wideband sixport-receiver three different branch-line couplers (BLCs) designs are evaluated under bending condition. As active elements metal-insulator-graphene diodes (MIG) are designed and fabricated on a flexible substrate. For circuit design the MIG diode is modelled with a SPICEcompatible large-signal model and compared to measurements. Finally, a graphene-based six-port receiver frontend is designed with the passive and active devices for microwave application around 5 GHz. This work, thus, presents the status of graphenebased wireless receivers on flexible substrate.}, note = {EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents the components and the design
of a microwave receiver frontend based on CVD-grown graphene on a flexible substrate. For the wideband sixport-receiver three different branch-line couplers (BLCs) designs are evaluated under bending condition. As active elements metal-insulator-graphene diodes (MIG) are designed and fabricated on a flexible substrate. For circuit design the MIG diode is modelled with a SPICEcompatible large-signal model and compared to measurements. Finally, a graphene-based six-port receiver frontend is designed with the passive and active devices for microwave application around 5 GHz. This work, thus, presents the status of graphenebased wireless receivers on flexible substrate. |
|
Kalita, Utpal; Tueckmantel, Christian; Riedl, Thomas; Pfeiffer, Ullrich R RF Characterization and De-Embedding of Parasitic Device Interconnects in a Metal-Oxide TFT Technology Inproceedings 2018 48th European Microwave Conference (EuMC), S. 741–744, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). @inproceedings{MC182539,
title = {RF Characterization and De-Embedding of Parasitic Device Interconnects in a Metal-Oxide TFT Technology}, author = {Utpal Kalita and Christian Tueckmantel and Thomas Riedl and Ullrich R Pfeiffer}, url = {https://www.eumwa.org/knowledge-center/EUMW2018/EUMC2018/MC182539.PDF}, year = {2018}, date = {2018-09-01}, booktitle = {2018 48th European Microwave Conference (EuMC)}, pages = {741–744}, abstract = {This paper describes the de-embedding procedure of a single ended metal-oxide thin-film transistor (TFT) in order to remove the effect of the extrinsic interconnects and determine the intrinsic device parameters. An eight-term scattering parameter (S-parameter) model of the two extrinsic ports has been used for the de-embedding. For that purpose, calibration standards are designed in the same technology and the Sparameters of the two extrinsic ports are determined. Due to difficulty in the extraction of the known resistances of the implemented standards at the input port, only the extrinsic input capacitance has been de-embedded from the S-parameters. The extrinsic shunt capacitances of around 500 fF and 100 fF at the input and output port respectively were extracted based on a lumped T-model. The transition frequency (fT) of the intrinsic device is found to be around 67 MHz.}, note = {EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper describes the de-embedding procedure
of a single ended metal-oxide thin-film transistor (TFT) in order to remove the effect of the extrinsic interconnects and determine the intrinsic device parameters. An eight-term scattering parameter (S-parameter) model of the two extrinsic ports has been used for the de-embedding. For that purpose, calibration standards are designed in the same technology and the Sparameters of the two extrinsic ports are determined. Due to difficulty in the extraction of the known resistances of the implemented standards at the input port, only the extrinsic input capacitance has been de-embedded from the S-parameters. The extrinsic shunt capacitances of around 500 fF and 100 fF at the input and output port respectively were extracted based on a lumped T-model. The transition frequency (fT) of the intrinsic device is found to be around 67 MHz. |
|
Schrufer, Daniel; Ellinger, Martin; Jank, Michael P M; Frey, Lothar; Weigel, Robert; Hagelauer, Amelie Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems Inproceedings 2018 48th European Microwave Conference (EuMC), S. 737–740, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). @inproceedings{MC182537,
title = {Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems}, author = {Daniel Schrufer and Martin Ellinger and Michael P M Jank and Lothar Frey and Robert Weigel and Amelie Hagelauer}, url = {https://www.eumwa.org/knowledge-center/EUMW2018/EUMC2018/MC182537.PDF}, year = {2018}, date = {2018-09-01}, booktitle = {2018 48th European Microwave Conference (EuMC)}, pages = {737–740}, abstract = {A novel architecture for thin-film transistors (TFT) utilising the concept of combining a staggered and a coplanar electrode in a single Alternating Contact TFT (ACTFT) is presented. It exhibits a transit frequency of 49.2MHz for a channel length of 0.6 μm at a drain and gate voltage of 2V. Based on these ACTFTs various n-channel-only digital circuits were fabricated and are presented here.}, note = {EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } A novel architecture for thin-film transistors
(TFT) utilising the concept of combining a staggered and a coplanar electrode in a single Alternating Contact TFT (ACTFT) is presented. It exhibits a transit frequency of 49.2MHz for a channel length of 0.6 μm at a drain and gate voltage of 2V. Based on these ACTFTs various n-channel-only digital circuits were fabricated and are presented here. |
|
Petti, L; Greco, E; Cantarella, G; Münzenrieder, N; Vogt, C; Tröster, G IEEE Transactions on Electron Devices, 65 (9), S. 3796-3802, 2018, ISSN: 0018-9383. @article{8411327,
title = {Flexible In\textendashGa\textendashZn\textendashO Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing}, author = {L Petti and E Greco and G Cantarella and N M\“{u}nzenrieder and C Vogt and G Tr\“{o}ster}, doi = {10.1109/TED.2018.2851926}, issn = {0018-9383}, year = {2018}, date = {2018-09-01}, journal = {IEEE Transactions on Electron Devices}, volume = {65}, number = {9}, pages = {3796-3802}, abstract = {In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium-gallium-zinc-oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and liftoff. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2· V-1· s-1and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 μm), the TFTs yield a transit frequency of 80 MHz (at 8.5-V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6-mm radius, corresponding to 0.4% tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nanostructures and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium-gallium-zinc-oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and liftoff. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2· V-1· s-1and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 μm), the TFTs yield a transit frequency of 80 MHz (at 8.5-V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6-mm radius, corresponding to 0.4% tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nanostructures and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.
|
|
Burghartz, J N; Alavi, G; Albrecht, B; Deuble, T; Elsobky, M; Ferwana, S; Harendt, C; Mahsereci, Y; Richter, H; Yu, Z Hybrid Systems-in-Foil – Combining Thin Chips with Large-Area Electronics Inproceedings 2018 International Flexible Electronics Technology Conference (IFETC), S. 1-6, 2018. @inproceedings{8583909,
title = {Hybrid Systems-in-Foil – Combining Thin Chips with Large-Area Electronics}, author = {J N Burghartz and G Alavi and B Albrecht and T Deuble and M Elsobky and S Ferwana and C Harendt and Y Mahsereci and H Richter and Z Yu}, doi = {10.1109/IFETC.2018.8583909}, year = {2018}, date = {2018-08-01}, booktitle = {2018 International Flexible Electronics Technology Conference (IFETC)}, pages = {1-6}, abstract = {This paper reports on the status of a comprehensive ten-year research and development effort towards Hybrid System-in-Foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electronic component implementation are combined in a complementary fashion attached on or laminated in a flexible carrier substrate. HySiF paves the way to entirely new applications of electronic products where form factor, form adaptivity or form flexibility are key enablers. In this review paper the various aspects of thin-chip fabrication and embedding, device and circuit design under impact of unknown or variable mechanical stress, and the on- and off-chip implementation of sensor, actuator, microwave and energy supply components are discussed.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper reports on the status of a comprehensive ten-year research and development effort towards Hybrid System-in-Foil (HySiF). In HySiF, the merits of high-performance integrated circuits on ultra-thin chips and of large-area and discrete electronic component implementation are combined in a complementary fashion attached on or laminated in a flexible carrier substrate. HySiF paves the way to entirely new applications of electronic products where form factor, form adaptivity or form flexibility are key enablers. In this review paper the various aspects of thin-chip fabrication and embedding, device and circuit design under impact of unknown or variable mechanical stress, and the on- and off-chip implementation of sensor, actuator, microwave and energy supply components are discussed.
|
|
Saeed, M; Hamed, A; Wang, Z; Shaygan, M; Neumaier, D; Negra, R Metal–Insulator–Graphene Diode Mixer Based on CVD Graphene-on-Glass Artikel IEEE Electron Device Letters, 39 (7), S. 1104-1107, 2018, ISSN: 0741-3106. @article{8360966,
title = {Metal\textendashInsulator\textendashGraphene Diode Mixer Based on CVD Graphene-on-Glass}, author = {M Saeed and A Hamed and Z Wang and M Shaygan and D Neumaier and R Negra}, doi = {10.1109/LED.2018.2838451}, issn = {0741-3106}, year = {2018}, date = {2018-07-01}, journal = {IEEE Electron Device Letters}, volume = {39}, number = {7}, pages = {1104-1107}, abstract = {In this letter, we present for the first time a mixer circuit based on Metal-Insulator-Graphene (MIG) diodes fabricated with large-scale monolayer graphene grown by chemical vapor deposition. A small-signal model extracted from the diode physical structure is used together with a large-signal model extracted from the dc characteristics of the MIG diode to build a down-conversion mixer. The measured conversion loss at a local oscillator power (PLO) of 5 dBm is lower than 15 dB, while RF-to-IF isolation is 36 dB with an input return loss and RF-to-LO isolation better than 10 dB over the frequency band from 1.7-6 GHz. Promising mixer results in combination with the CVD-based process promote the MIG diode-based mixer to be used in low-power, low-cost, microwave, and millimeter-wave circuit applications.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this letter, we present for the first time a mixer circuit based on Metal-Insulator-Graphene (MIG) diodes fabricated with large-scale monolayer graphene grown by chemical vapor deposition. A small-signal model extracted from the diode physical structure is used together with a large-signal model extracted from the dc characteristics of the MIG diode to build a down-conversion mixer. The measured conversion loss at a local oscillator power (PLO) of 5 dBm is lower than 15 dB, while RF-to-IF isolation is 36 dB with an input return loss and RF-to-LO isolation better than 10 dB over the frequency band from 1.7-6 GHz. Promising mixer results in combination with the CVD-based process promote the MIG diode-based mixer to be used in low-power, low-cost, microwave, and millimeter-wave circuit applications.
|
|
Popp, J; Kaiser, W; Gagliardi, A Simulation of Enhanced Exciton Diffusion in Organic Solar Cells with Phosphorescent Sensitizers Inproceedings 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), S. 420-425, 2018, ISSN: 1944-9380. @inproceedings{8626281,
title = {Simulation of Enhanced Exciton Diffusion in Organic Solar Cells with Phosphorescent Sensitizers}, author = {J Popp and W Kaiser and A Gagliardi}, doi = {10.1109/NANO.2018.8626281}, issn = {1944-9380}, year = {2018}, date = {2018-07-01}, booktitle = {2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)}, pages = {420-425}, abstract = {Organic solar cells exhibit unique properties such as light-weight, flexibility and solution processability. A major disadvantage in comparison with inorganic solar cells is the low power conversion efficiency (PCE) due to low exciton diffusion lengths and high recombination losses. Bulk-heterojunction (BHJ) solar cells have been utilized to maximize the excitonic yield using an optimized morphology with the cost of a large interface area. This complex morphology causes a high charge recombination and strong local variations in the morphology. In this work, we investigate the impact of phosphorescent sensitizers on the PCE for organic solar cells. Phosphorescent sensitizers convert short-lifetime singlet into long-lifetime triplet excitons and have been shown to enhance the effective lifetime and diffusion length. We study the impact of the sensitizer concentration on bilayer solar cells as an alternative method to tailoring efficiency with a minimum donor-acceptor interface.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } Organic solar cells exhibit unique properties such as light-weight, flexibility and solution processability. A major disadvantage in comparison with inorganic solar cells is the low power conversion efficiency (PCE) due to low exciton diffusion lengths and high recombination losses. Bulk-heterojunction (BHJ) solar cells have been utilized to maximize the excitonic yield using an optimized morphology with the cost of a large interface area. This complex morphology causes a high charge recombination and strong local variations in the morphology. In this work, we investigate the impact of phosphorescent sensitizers on the PCE for organic solar cells. Phosphorescent sensitizers convert short-lifetime singlet into long-lifetime triplet excitons and have been shown to enhance the effective lifetime and diffusion length. We study the impact of the sensitizer concentration on bilayer solar cells as an alternative method to tailoring efficiency with a minimum donor-acceptor interface.
|
|
Schultz, Thorsten; Vogt, Sofie; Schlupp, Peter; von Wenckstern, Holger; Koch, Norbert; Grundmann, Marius Phys. Rev. Applied, 9 , S. 064001, 2018. @article{PhysRevApplied.9.064001,
title = {Influence of Oxygen Deficiency on the Rectifying Behavior of Transparent-Semiconducting-Oxide–Metal Interfaces}, author = {Thorsten Schultz and Sofie Vogt and Peter Schlupp and Holger von Wenckstern and Norbert Koch and Marius Grundmann}, url = {https://link.aps.org/doi/10.1103/PhysRevApplied.9.064001}, doi = {10.1103/PhysRevApplied.9.064001}, year = {2018}, date = {2018-06-01}, journal = {Phys. Rev. Applied}, volume = {9}, pages = {064001}, publisher = {American Physical Society}, keywords = {}, pubstate = {published}, tppubtype = {article} } |
|
Ellinger, F; Ishida, K; Meister, T; Boroujeni, B K; Barahona, M; Carta, C; Münzenrieder, N; Knobelspies, S; Salvatore, G A; Tröster, G; Schmidt, G C; Hübler, A C Bendable Printed and Thin-film Electronics for Wireless Communications Inproceedings Second URSI Atlantic Radio Science Meeting – 2018 (URSI AT-RASC), Gran Canaria, 28 May – 1 June 2018, 2018. @inproceedings{Ellinger_ATRASC2018,
title = {Bendable Printed and Thin-film Electronics for Wireless Communications}, author = {F Ellinger and K Ishida and T Meister and B K Boroujeni and M Barahona and C Carta and N M\“{u}nzenrieder and S Knobelspies and G A Salvatore and G Tr\“{o}ster and G C Schmidt and A C H\“{u}bler}, year = {2018}, date = {2018-05-01}, booktitle = {Second URSI Atlantic Radio Science Meeting – 2018 (URSI AT-RASC), Gran Canaria, 28 May \textendash 1 June 2018}, abstract = {In this paper an overview of the recent progress of bendable ultra-thin and lightweight electronics for wearable wireless communication systems is given. This kind of electronics can be realized on a piece of plastic foil or paper and does not need any standard rigid chips. The focus will be on organic, printed and thin-film electronics and addresses the following components: thin-film transistors (TFTs) with transit frequency (ft) up to 135 MHz, roll to roll (R2R) printed organic field effect transistors (OFETs) with ft beyond 50 kHz, an OFET-based R2R printed audio amplifier, active TFT-based wireless transmitters and receivers up to 20 MHz, and R2R printed passive radio frequency identification (RFID) tags in the GHz range.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } In this paper an overview of the recent progress of bendable
ultra-thin and lightweight electronics for wearable wireless communication systems is given. This kind of electronics can be realized on a piece of plastic foil or paper and does not need any standard rigid chips. The focus will be on organic, printed and thin-film electronics and addresses the following components: thin-film transistors (TFTs) with transit frequency (ft) up to 135 MHz, roll to roll (R2R) printed organic field effect transistors (OFETs) with ft beyond 50 kHz, an OFET-based R2R printed audio amplifier, active TFT-based wireless transmitters and receivers up to 20 MHz, and R2R printed passive radio frequency identification (RFID) tags in the GHz range. |
|
Alavi, G; Sailer, H; Albrecht, B; Harendt, C; Burghartz, J N Adaptive Layout Technique for Microhybrid Integration of Chip-Film Patch Artikel IEEE Transactions on Components, Packaging and Manufacturing Technology, 8 (5), S. 802-810, 2018, ISSN: 2156-3950. @article{8338141,
title = {Adaptive Layout Technique for Microhybrid Integration of Chip-Film Patch}, author = {G Alavi and H Sailer and B Albrecht and C Harendt and J N Burghartz}, doi = {10.1109/TCPMT.2018.2818762}, issn = {2156-3950}, year = {2018}, date = {2018-05-01}, journal = {IEEE Transactions on Components, Packaging and Manufacturing Technology}, volume = {8}, number = {5}, pages = {802-810}, abstract = {In this paper, a unique adaptive layout methodology for accurate interconnection between two or more functional chips at the wafer level is presented. The methodology is based on an automatic layout modification for each embedded chip with considering exact related offset and rotation after chip embedding. As a result, a wafer-level embedding and accurate interconnecting and integrating of ultrathin chips in the polymer are feasible. The significant application of the presented accurate interconnection between the groups of functional chips is the microhybrid system-in-foil. Also, an adaptive interconnect layout at wafer-level base, allowing for a small wire pitch on and off the chip, leads to reducing silicon area and, thus, saves cost. In this paper, the process flow for embedding and integrating chips based on the adaptive layout technique is presented. The custom designed test chips are processed for the measurement and optimization of overlay accuracy of the adaptive interconnect layout regardless of the chip thickness, warpage, and topography. Besides, the electrical measurements after integrating ultrathin chips in foil confirm the interconnection between chips.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, a unique adaptive layout methodology for accurate interconnection between two or more functional chips at the wafer level is presented. The methodology is based on an automatic layout modification for each embedded chip with considering exact related offset and rotation after chip embedding. As a result, a wafer-level embedding and accurate interconnecting and integrating of ultrathin chips in the polymer are feasible. The significant application of the presented accurate interconnection between the groups of functional chips is the microhybrid system-in-foil. Also, an adaptive interconnect layout at wafer-level base, allowing for a small wire pitch on and off the chip, leads to reducing silicon area and, thus, saves cost. In this paper, the process flow for embedding and integrating chips based on the adaptive layout technique is presented. The custom designed test chips are processed for the measurement and optimization of overlay accuracy of the adaptive interconnect layout regardless of the chip thickness, warpage, and topography. Besides, the electrical measurements after integrating ultrathin chips in foil confirm the interconnection between chips.
|
|
Kaiser, Waldemar; Albes, Tim; Gagliardi, Alessio Phys. Chem. Chem. Phys., S. -, 2018. @article{C8CP00544C,
title = {Charge carrier mobility of disordered organic semiconductors with correlated energetic and spatial disorder}, author = {Waldemar Kaiser and Tim Albes and Alessio Gagliardi}, url = {http://dx.doi.org/10.1039/C8CP00544C}, doi = {10.1039/C8CP00544C}, year = {2018}, date = {2018-01-01}, journal = {Phys. Chem. Chem. Phys.}, pages = {-}, publisher = {The Royal Society of Chemistry}, abstract = {Low charge carrier mobility is one key factor limiting the performance and applicability of devices based on organic semiconductors. Theoretical studies on the mobility using kinetic Monte Carlo or Master equation are mainly based on a Gaussian energetic disorder and regular cubic lattices. The dependence of the mobility on the electric field, temperature and charge carrier density is well studied for the Gaussian disorder model. In this work, we investigate the influence of spatially correlated site energies and spatial disorder in the lattice sites on the mobility using kinetic Monte Carlo simulations. Our analysis is based on both a regular cubic and a non-cubic Voronoi lattice. The latter is used to include spatial disorder in order to study its influence on the mobility for amorphous organic materials. Our results show, that the charge carrier mobility is strongly influenced by correlations in the site energies. Strong correlations even invert the field dependence of the mobility as observed experimentally in semi-crystalline polymers such as P3HT. Evaluation of local currents between localized states reveals the formation of current filaments with rising correlation. Furthermore, the influence of the electric field and the energy landscape on the transport energy is studied by evaluation of active sites. A strong correlation between the transport energy, filaments in the local currents and the charge carrier mobility is observed. Our studies on the spatial disorder model do not indicate an inversion of the field dependence as observed by other researchers. The negative field-dependence in semi-crystalline materials may be explained by a higher correlation in the site energies as shown in the strongly correlated energetic landscape.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Low charge carrier mobility is one key factor limiting the performance and applicability of devices based on organic semiconductors. Theoretical studies on the mobility using kinetic Monte Carlo or Master equation are mainly based on a Gaussian energetic disorder and regular cubic lattices. The dependence of the mobility on the electric field, temperature and charge carrier density is well studied for the Gaussian disorder model. In this work, we investigate the influence of spatially correlated site energies and spatial disorder in the lattice sites on the mobility using kinetic Monte Carlo simulations. Our analysis is based on both a regular cubic and a non-cubic Voronoi lattice. The latter is used to include spatial disorder in order to study its influence on the mobility for amorphous organic materials. Our results show, that the charge carrier mobility is strongly influenced by correlations in the site energies. Strong correlations even invert the field dependence of the mobility as observed experimentally in semi-crystalline polymers such as P3HT. Evaluation of local currents between localized states reveals the formation of current filaments with rising correlation. Furthermore, the influence of the electric field and the energy landscape on the transport energy is studied by evaluation of active sites. A strong correlation between the transport energy, filaments in the local currents and the charge carrier mobility is observed. Our studies on the spatial disorder model do not indicate an inversion of the field dependence as observed by other researchers. The negative field-dependence in semi-crystalline materials may be explained by a higher correlation in the site energies as shown in the strongly correlated energetic landscape.
|
|
Saeed, M; Hamed, A; Wang, Z; Shaygan, M; Neumaier, D; Negra, R IEEE Transactions on Microwave Theory and Techniques, PP (99), S. 1-7, 2018, ISSN: 0018-9480. @article{8268674,
title = {Zero-Bias 50-dB Dynamic Range Linear-in-dB V-Band Power Detector Based on CVD Graphene Diode on Glass}, author = {M Saeed and A Hamed and Z Wang and M Shaygan and D Neumaier and R Negra}, doi = {10.1109/TMTT.2018.2792439}, issn = {0018-9480}, year = {2018}, date = {2018-01-01}, journal = {IEEE Transactions on Microwave Theory and Techniques}, volume = {PP}, number = {99}, pages = {1-7}, abstract = {In this paper, we report the design, fabrication, and demonstration of a compact, V-band, zero-bias, and linear-in-dB power detector based on our in-house metal-insulator-graphene diode fabricated on a glass substrate. The presented circuit is optimized for the frequency band of 40-75 GHz. The measured prototype shows a repeatable measured dynamic range of at least 50 dB with down to -50 dBm sensitivity on 500-μm-thick quartz substrate. It also shows input return loss better than -9.5 dB over the entire design bandwidth. The measured tangential responsivity for the fabricated circuit on glass is 168 V/W at 2.5 GHz and 15 V/W at 60 GHz. The obtained results together with the robust device fabrication based on chemical vapor deposition graphene promote the proposed scheme and device for repeatable, statistically stable millimeter-wave, and submillimeter-wave applications.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, we report the design, fabrication, and demonstration of a compact, V-band, zero-bias, and linear-in-dB power detector based on our in-house metal-insulator-graphene diode fabricated on a glass substrate. The presented circuit is optimized for the frequency band of 40-75 GHz. The measured prototype shows a repeatable measured dynamic range of at least 50 dB with down to -50 dBm sensitivity on 500-μm-thick quartz substrate. It also shows input return loss better than -9.5 dB over the entire design bandwidth. The measured tangential responsivity for the fabricated circuit on glass is 168 V/W at 2.5 GHz and 15 V/W at 60 GHz. The obtained results together with the robust device fabrication based on chemical vapor deposition graphene promote the proposed scheme and device for repeatable, statistically stable millimeter-wave, and submillimeter-wave applications.
|
|
Saeed, Mohamed; Hamed, Ahmed; Wang, Zhenxing; Shaygan, Mehrdad; Neumaier, Daniel; Negra, Renato Graphene integrated circuits: new prospects towards receiver realisation Artikel Nanoscale, 10 , S. 93-99, 2018. @article{C7NR06871A,
title = {Graphene integrated circuits: new prospects towards receiver realisation}, author = {Mohamed Saeed and Ahmed Hamed and Zhenxing Wang and Mehrdad Shaygan and Daniel Neumaier and Renato Negra}, url = {http://dx.doi.org/10.1039/C7NR06871A}, doi = {10.1039/C7NR06871A}, year = {2018}, date = {2018-01-01}, journal = {Nanoscale}, volume = {10}, pages = {93-99}, publisher = {The Royal Society of Chemistry}, abstract = {This work demonstrates a design approach which enables the fabrication of fully integrated radio frequency (RF) and millimetre-wave frequency direct-conversion graphene receivers by adapting the frontend architecture to exploit the state-of-the-art performance of the recently reported wafer-scale CVD metal-insulator-graphene (MIG) diodes. As a proof-of-concept, we built a fully integrated microwave receiver in the frequency range 2.1-2.7 GHz employing the strong nonlinearity and the high responsivity of MIG diodes to successfully receive and demodulate complex, digitally modulated communication signals at 2.45 GHz. In addition, the fabricated receiver uses zero-biased MIG diodes and consumes zero dc power. With the flexibility to be fabricated on different substrates, the prototype receiver frontend is fabricated on a low-cost, glass substrate utilising a custom-developed MMIC process backend which enables the high performance of passive components. The measured performance of the prototype makes it suitable for Internet-of-Things (IoT) and Radio Frequency Identification (RFID) systems for medical and communication applications.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This work demonstrates a design approach which enables the fabrication of fully integrated radio frequency (RF) and millimetre-wave frequency direct-conversion graphene receivers by adapting the frontend architecture to exploit the state-of-the-art performance of the recently reported wafer-scale CVD metal-insulator-graphene (MIG) diodes. As a proof-of-concept, we built a fully integrated microwave receiver in the frequency range 2.1-2.7 GHz employing the strong nonlinearity and the high responsivity of MIG diodes to successfully receive and demodulate complex, digitally modulated communication signals at 2.45 GHz. In addition, the fabricated receiver uses zero-biased MIG diodes and consumes zero dc power. With the flexibility to be fabricated on different substrates, the prototype receiver frontend is fabricated on a low-cost, glass substrate utilising a custom-developed MMIC process backend which enables the high performance of passive components. The measured performance of the prototype makes it suitable for Internet-of-Things (IoT) and Radio Frequency Identification (RFID) systems for medical and communication applications.
|
|
Sun, Shih-Jye; Menšík, Miroslav; Toman, Petr; Gagliardi, Alessio; Král, Karel Influence of acceptor on charge mobility in stacked π-conjugated polymers Artikel Chemical Physics, 501 , S. 8 – 14, 2018, ISSN: 0301-0104. @article{SUN20188,
title = {Influence of acceptor on charge mobility in stacked π-conjugated polymers}, author = {Shih-Jye Sun and Miroslav Men\v{s}\'{i}k and Petr Toman and Alessio Gagliardi and Karel Kr\'{a}l}, url = {http://www.sciencedirect.com/science/article/pii/S0301010417308224}, doi = {https://doi.org/10.1016/j.chemphys.2017.11.016}, issn = {0301-0104}, year = {2018}, date = {2018-01-01}, journal = {Chemical Physics}, volume = {501}, pages = {8 – 14}, abstract = {We present a quantum molecular model to calculate mobility of π-stacked P3HT polymer layers with electron acceptor dopants coupled next to side groups in random position with respect to the linear chain. The hole density, the acceptor LUMO energy and the hybridization transfer integral between the acceptor and polymer were found to be very critical factors to the final hole mobility. For a dopant LUMO energy close and high above the top of the polymer valence band we have found a significant mobility increase with the hole concentration and with the dopant LUMO energy approaching the top of the polymer valence band. Higher mobility was achieved for small values of hybridization transfer integral between polymer and the acceptor, corresponding to the case of weakly bound acceptor. Strong couplings between the polymer and the acceptor with Coulomb repulsion interactions induced from the electron localizations was found to suppress the hole mobility.}, keywords = {}, pubstate = {published}, tppubtype = {article} } We present a quantum molecular model to calculate mobility of π-stacked P3HT polymer layers with electron acceptor dopants coupled next to side groups in random position with respect to the linear chain. The hole density, the acceptor LUMO energy and the hybridization transfer integral between the acceptor and polymer were found to be very critical factors to the final hole mobility. For a dopant LUMO energy close and high above the top of the polymer valence band we have found a significant mobility increase with the hole concentration and with the dopant LUMO energy approaching the top of the polymer valence band. Higher mobility was achieved for small values of hybridization transfer integral between polymer and the acceptor, corresponding to the case of weakly bound acceptor. Strong couplings between the polymer and the acceptor with Coulomb repulsion interactions induced from the electron localizations was found to suppress the hole mobility.
|
|
Özbek, Sefa; Alavi, Golzar; Digel, Johannes; Grözing, Markus; Burghartz, Joachim N; Berroth, Manfred 3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications Artikel Integration, 63 , S. 291 – 298, 2018, ISSN: 0167-9260. @article{OZBEK2018291,
title = {3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications}, author = {Sefa \“{O}zbek and Golzar Alavi and Johannes Digel and Markus Gr\“{o}zing and Joachim N Burghartz and Manfred Berroth}, url = {http://www.sciencedirect.com/science/article/pii/S016792601730634X}, doi = {https://doi.org/10.1016/j.vlsi.2018.04.010}, issn = {0167-9260}, year = {2018}, date = {2018-01-01}, journal = {Integration}, volume = {63}, pages = {291 – 298}, abstract = {This paper reports a transformer-based integrated class-A Differential Power Amplifier (DPA) for the Internet of Things (IoT) applications. The proposed 5\textendash6 GHz fully integrated differential PA is fabricated in a cost-effective 95 GHz-fmax, 0.25 μm SiGe BiCMOS technology (IHP process SGB25V). The amplifier utilizes a thin Si chip with a thickness of 45 μm in order to be embedded into flexible electronic foil systems. Several key RF performance parameters of the DPA with different substrate thicknesses are evaluated at the wafer level. The measurement results indicate that the DPA shows no significant S-parameters degradation due to the thickness differences. The measured gain center frequency is shifted about 300 MHz towards higher frequencies after thinning because of the image mirror currents within the conducting material at the backside of the chip. The DPA achieves 10.65 dB and 9.7 dB small-signal gain at 5.5 GHz before and after thinning, respectively. The PA delivers an output power of +9 dBm before and +8.1 dBm after thinning process at Pin = −1.3 dBm. The simulated 1 dB compression point occurs at +10.76 dBm output power with a PAE of 15%.}, keywords = {}, pubstate = {published}, tppubtype = {article} } This paper reports a transformer-based integrated class-A Differential Power Amplifier (DPA) for the Internet of Things (IoT) applications. The proposed 5–6 GHz fully integrated differential PA is fabricated in a cost-effective 95 GHz-fmax, 0.25 μm SiGe BiCMOS technology (IHP process SGB25V). The amplifier utilizes a thin Si chip with a thickness of 45 μm in order to be embedded into flexible electronic foil systems. Several key RF performance parameters of the DPA with different substrate thicknesses are evaluated at the wafer level. The measurement results indicate that the DPA shows no significant S-parameters degradation due to the thickness differences. The measured gain center frequency is shifted about 300 MHz towards higher frequencies after thinning because of the image mirror currents within the conducting material at the backside of the chip. The DPA achieves 10.65 dB and 9.7 dB small-signal gain at 5.5 GHz before and after thinning, respectively. The PA delivers an output power of +9 dBm before and +8.1 dBm after thinning process at Pin = −1.3 dBm. The simulated 1 dB compression point occurs at +10.76 dBm output power with a PAE of 15%.
|
|
Joshi, Saumya; Bhatt, Vijay Deep; Rani, Himanshi; Becherer, Markus; Lugli, Paolo Understanding the influence of in-plane gate electrode design on electrolyte gated transistor Artikel Microelectronic Engineering, 199 , S. 87 – 91, 2018, ISSN: 0167-9317. @article{JOSHI201887,
title = {Understanding the influence of in-plane gate electrode design on electrolyte gated transistor}, author = {Saumya Joshi and Vijay Deep Bhatt and Himanshi Rani and Markus Becherer and Paolo Lugli}, url = {http://www.sciencedirect.com/science/article/pii/S0167931718303630}, doi = {https://doi.org/10.1016/j.mee.2018.07.019}, issn = {0167-9317}, year = {2018}, date = {2018-01-01}, journal = {Microelectronic Engineering}, volume = {199}, pages = {87 – 91}, abstract = {Present work investigates the influence of gate electrode design in performance of electrolyte-gated carbon nanotube transistors. Electrolyte gated transistors have a huge potential in biological and chemical sensing. Recently, in-plane gate electrode has replaced the earlier used gate electrode wire in these systems. It becomes extremely essential to investigate the impact of gate electrode design on the device properties, and to optimize the electrode design to harness maximum sensitivity and speed. As a part of this work we have investigated the impact of gate electrode area and the distance between the gate electrode and the channel on the transistor characteristics. Area of gate electrode scales almost linearly with the drain to source current. However, the dependence of the gate distance is highly affected by experimental factors. Random network of carbon nanotubes serve as the semicondutor channel for electrolyte gated field effect transistors under study.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Present work investigates the influence of gate electrode design in performance of electrolyte-gated carbon nanotube transistors. Electrolyte gated transistors have a huge potential in biological and chemical sensing. Recently, in-plane gate electrode has replaced the earlier used gate electrode wire in these systems. It becomes extremely essential to investigate the impact of gate electrode design on the device properties, and to optimize the electrode design to harness maximum sensitivity and speed. As a part of this work we have investigated the impact of gate electrode area and the distance between the gate electrode and the channel on the transistor characteristics. Area of gate electrode scales almost linearly with the drain to source current. However, the dependence of the gate distance is highly affected by experimental factors. Random network of carbon nanotubes serve as the semicondutor channel for electrolyte gated field effect transistors under study.
|
|
Joshi, Saumya; Bhatt, Vijay Deep; Jaworska, Ewa; Michalska, Agata; Maksymiuk, Krzysztof; Becherer, Markus; Gagliardi, Alessio; Lugli, Paolo Scientific Reports, 8 (1), S. 11386–, 2018, ISSN: 2045-2322. @article{Joshi2018b,
title = {Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor}, author = {Saumya Joshi and Vijay Deep Bhatt and Ewa Jaworska and Agata Michalska and Krzysztof Maksymiuk and Markus Becherer and Alessio Gagliardi and Paolo Lugli}, url = {https://doi.org/10.1038/s41598-018-29882-w}, issn = {2045-2322}, year = {2018}, date = {2018-01-01}, journal = {Scientific Reports}, volume = {8}, number = {1}, pages = {11386–}, abstract = {In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.
|
|
Haase, Katherina; da Rocha, Cecilia Teixeira; Hauenstein, Christoph; Zheng, Yichu; Hambsch, Mike; Mannsfeld, Stefan C B High-Mobility, Solution-Processed Organic Field-Effect Transistors from C8-BTBT:Polystyrene Blends Artikel Advanced Electronic Materials, 4 (8), S. 1800076, 2018. @article{doi:10.1002/aelm.201800076,
title = {High-Mobility, Solution-Processed Organic Field-Effect Transistors from C8-BTBT:Polystyrene Blends}, author = {Katherina Haase and Cecilia Teixeira da Rocha and Christoph Hauenstein and Yichu Zheng and Mike Hambsch and Stefan C B Mannsfeld}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800076}, doi = {10.1002/aelm.201800076}, year = {2018}, date = {2018-01-01}, journal = {Advanced Electronic Materials}, volume = {4}, number = {8}, pages = {1800076}, abstract = {Abstract Organic field-effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm2 V−1 s−1. This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field-effect transistors based on the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C8-BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear-coated devices with excellent device characteristics and gate-voltage-independent mobility values reaching 12 cm2 V−1 s−1 are shown, which are the highest reported values for C8-BTBT-based films prepared by a scalable, solution-based process.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract Organic field-effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm2 V−1 s−1. This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field-effect transistors based on the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C8-BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear-coated devices with excellent device characteristics and gate-voltage-independent mobility values reaching 12 cm2 V−1 s−1 are shown, which are the highest reported values for C8-BTBT-based films prepared by a scalable, solution-based process.
|
|
Kaiser, Waldemar; Popp, Johannes; Rinderle, Michael; Albes, Tim; Gagliardi, Alessio Generalized Kinetic Monte Carlo Framework for Organic Electronics Artikel Algorithms, 11 (4), 2018, ISSN: 1999-4893. @article{a11040037,
title = {Generalized Kinetic Monte Carlo Framework for Organic Electronics}, author = {Waldemar Kaiser and Johannes Popp and Michael Rinderle and Tim Albes and Alessio Gagliardi}, url = {https://www.mdpi.com/1999-4893/11/4/37}, doi = {10.3390/a11040037}, issn = {1999-4893}, year = {2018}, date = {2018-01-01}, journal = {Algorithms}, volume = {11}, number = {4}, abstract = {In this paper, we present our generalized kinetic Monte Carlo (kMC) framework for the simulation of organic semiconductors and electronic devices such as solar cells (OSCs) and light-emitting diodes (OLEDs). Our model generalizes the geometrical representation of the multifaceted properties of the organic material by the use of a non-cubic, generalized Voronoi tessellation and a model that connects sites to polymer chains. Herewith, we obtain a realistic model for both amorphous and crystalline domains of small molecules and polymers. Furthermore, we generalize the excitonic processes and include triplet exciton dynamics, which allows an enhanced investigation of OSCs and OLEDs. We outline the developed methods of our generalized kMC framework and give two exemplary studies of electrical and optical properties inside an organic semiconductor.}, keywords = {}, pubstate = {published}, tppubtype = {article} } In this paper, we present our generalized kinetic Monte Carlo (kMC) framework for the simulation of organic semiconductors and electronic devices such as solar cells (OSCs) and light-emitting diodes (OLEDs). Our model generalizes the geometrical representation of the multifaceted properties of the organic material by the use of a non-cubic, generalized Voronoi tessellation and a model that connects sites to polymer chains. Herewith, we obtain a realistic model for both amorphous and crystalline domains of small molecules and polymers. Furthermore, we generalize the excitonic processes and include triplet exciton dynamics, which allows an enhanced investigation of OSCs and OLEDs. We outline the developed methods of our generalized kMC framework and give two exemplary studies of electrical and optical properties inside an organic semiconductor.
|
2017 |
|
Ishida, K; Meister, T; Knobelspies, S; Münzenrieder, N; Cantarella, G; Salvatore, G A; Tröster, G; Carta, C; Ellinger, F 3–5 V, 3–3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter Inproceedings 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), S. 1-4, 2017. @inproceedings{8244748,
title = {3\textendash5 V, 3\textendash3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter}, author = {K Ishida and T Meister and S Knobelspies and N M\“{u}nzenrieder and G Cantarella and G A Salvatore and G Tr\“{o}ster and C Carta and F Ellinger}, doi = {10.1109/COMCAS.2017.8244748}, year = {2017}, date = {2017-11-01}, booktitle = {2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}, pages = {1-4}, abstract = {This paper presents an On-Off-Keying (OOK) modulator for a flexible and wearable wireless transmitter implemented in an amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT technology. The circuit consists of a three-stage ring oscillator for the carrier and an output driver with an OOK modulation switch, realized with just five transistors. In order to maximize the operation frequency, we use 2 μm-long nMOS transistors in the circuit design. The proposed OOK modulator is fabricated on a polyimide flexible substrate, and characterized with 3-to-5 V supply voltages and an output load capacitance of 15 pF. The circuit operates from the lowest supply voltage of 3 V, while the highest measured oscillation frequency is 3.76 MHz at 5 V V_DD . Although the schematic is simple and straight forward, the equivalent modulation depth ranges from 61.3 % to 78.2 %, which can be detected with an existing AM/OOK receiver in the same technology. The power consumptions for 3 V and 5 V supply voltages are 2.15 mW and 6.77 mW, respectively.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents an On-Off-Keying (OOK) modulator for a
flexible and wearable wireless transmitter implemented in an amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT technology. The circuit consists of a three-stage ring oscillator for the carrier and an output driver with an OOK modulation switch, realized with just five transistors. In order to maximize the operation frequency, we use 2 μm-long nMOS transistors in the circuit design. The proposed OOK modulator is fabricated on a polyimide flexible substrate, and characterized with 3-to-5 V supply voltages and an output load capacitance of 15 pF. The circuit operates from the lowest supply voltage of 3 V, while the highest measured oscillation frequency is 3.76 MHz at 5 V V_DD . Although the schematic is simple and straight forward, the equivalent modulation depth ranges from 61.3 % to 78.2 %, which can be detected with an existing AM/OOK receiver in the same technology. The power consumptions for 3 V and 5 V supply voltages are 2.15 mW and 6.77 mW, respectively. |
|
Meister, T; Ellinger, F; Bartha, J W; Berroth, M; Burghartz, J; Claus, M; Frey, L; Gagliardi, A; Grundmann, M; Hesselbarth, J; Klauk, H; Leo, K; Lugli, P; Mannsfeld, S; Manoli, Y; Negra, R; Neumaier, D; Pfeiffer, U; Riedl, T; Scheinert, S; Scherf, U; Thiede, A; Tröster, G; Vossiek, M; Weigel, R; Wenger, C; Alavi, G; Becherer, M; Chavarin, C A; Darwish, M; Ellinger, M; Fan, C Y; Fritsch, M; Grotjahn, F; Gunia, M; Haase, K; Hillger, P; Ishida, K; Jank, M; Knobelspies, S; Kuhl, M; Lupina, G; Naghadeh, S M; Münzenrieder, N; Özbek, S; Rasteh, M; Salvatore, G A; Schrüfer, D; Strobel, C; Theisen, M; Tückmantel, C; von Wenckstern, H; Wang, Z; Zhang, Z Program FFlexCom – High frequency flexible bendable electronics for wireless communication systems Inproceedings 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), S. 1-6, 2017. @inproceedings{8244733,
title = {Program FFlexCom – High frequency flexible bendable electronics for wireless communication systems}, author = {T Meister and F Ellinger and J W Bartha and M Berroth and J Burghartz and M Claus and L Frey and A Gagliardi and M Grundmann and J Hesselbarth and H Klauk and K Leo and P Lugli and S Mannsfeld and Y Manoli and R Negra and D Neumaier and U Pfeiffer and T Riedl and S Scheinert and U Scherf and A Thiede and G Tr\“{o}ster and M Vossiek and R Weigel and C Wenger and G Alavi and M Becherer and C A Chavarin and M Darwish and M Ellinger and C Y Fan and M Fritsch and F Grotjahn and M Gunia and K Haase and P Hillger and K Ishida and M Jank and S Knobelspies and M Kuhl and G Lupina and S M Naghadeh and N M\“{u}nzenrieder and S \“{O}zbek and M Rasteh and G A Salvatore and D Schr\“{u}fer and C Strobel and M Theisen and C T\“{u}ckmantel and H von Wenckstern and Z Wang and Z Zhang}, doi = {10.1109/COMCAS.2017.8244733}, year = {2017}, date = {2017-11-01}, booktitle = {2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}, pages = {1-6}, abstract = {Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid – they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid – they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials.
|
|
Saeed, M; Hamed, A; Fan, C Y; Heidebrecht, E; Negra, R; Shaygan, M; Wang, Z; Neumaier, D Millimeter-wave graphene-based varactor for flexible electronics Inproceedings 2017 12th European Microwave Integrated Circuits Conference (EuMIC), S. 117-120, 2017. @inproceedings{8230674,
title = {Millimeter-wave graphene-based varactor for flexible electronics}, author = {M Saeed and A Hamed and C Y Fan and E Heidebrecht and R Negra and M Shaygan and Z Wang and D Neumaier}, doi = {10.23919/EuMIC.2017.8230674}, year = {2017}, date = {2017-10-01}, booktitle = {2017 12th European Microwave Integrated Circuits Conference (EuMIC)}, pages = {117-120}, abstract = {This paper presents the design, fabrication, and characterization of the first millimeter-wave Graphene-based varactor on flexible substrates. The varactor achieves quality factor better than 10 up to 25 GHz with variation of 5-10% for a bending radius down to 5 mm with pronounced varactor behavior measured up to at least 70 GHz. To prove the substrate independence of the proposed varactor, we fabricated it on high resistivity silicon (HRS) achieving quality factors of 6 at 20 GHz, and on Quartz substrate achieving quality factors of 10 up to 50 GHz. Measurement results promote the proposed varactor for millimeter-Wave circuits and systems applications, especially on flexible substrates.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents the design, fabrication, and
characterization of the first millimeter-wave Graphene-based varactor on flexible substrates. The varactor achieves quality factor better than 10 up to 25 GHz with variation of 5-10% for a bending radius down to 5 mm with pronounced varactor behavior measured up to at least 70 GHz. To prove the substrate independence of the proposed varactor, we fabricated it on high resistivity silicon (HRS) achieving quality factors of 6 at 20 GHz, and on Quartz substrate achieving quality factors of 10 up to 50 GHz. Measurement results promote the proposed varactor for millimeter-Wave circuits and systems applications, especially on flexible substrates. |
|
Zschieschang, U; Letzkus, F; Burghartz, J N; Klauk, H IEEE Transactions on Nanotechnology, 16 (5), S. 837-841, 2017, ISSN: 1536-125X. @article{KlaukBurghartz2017,
title = {Parameter Uniformity of Submicron-Channel-Length Organic Thin-Film Transistors Fabricated by Stencil Lithography}, author = {U Zschieschang and F Letzkus and J N Burghartz and H Klauk}, doi = {10.1109/TNANO.2017.2655882}, issn = {1536-125X}, year = {2017}, date = {2017-09-01}, journal = {IEEE Transactions on Nanotechnology}, volume = {16}, number = {5}, pages = {837-841}, abstract = {Using high-resolution stencil lithography, we have fabricated bottom-gate, top-contact (inverted staggered) organic thin-film transistors that have a channel length of 0.5 μm and gate-to-source and gate-to-drain overlaps of 2 μm. Owing to the small channel length, the transistors have a large width-normalized transconductance of (0.50 ± 0.05) S/m, despite the relatively small charge-carrier mobility of (0.36 ± 0.04) cm2/V · s. Across an array of 16 transistors, the uniformity of the transconductance is about 9% (1σ), the uniformity of the carrier mobility is about 7%, the uniformity of the threshold voltage is about 4%, the subthreshold slope varies between 95 and 150 mV/decade, and the on/off current ratio varies between 7 × 104 and 3 × 106. To our knowledge, this is the first time that the parameter distribution of submicron-channel-length organic TFTs is reported.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Using high-resolution stencil lithography, we have fabricated bottom-gate, top-contact (inverted staggered) organic thin-film transistors that have a channel length of 0.5 μm and gate-to-source and gate-to-drain overlaps of 2 μm. Owing to the small channel length, the transistors have a large width-normalized transconductance of (0.50 ± 0.05) S/m, despite the relatively small charge-carrier mobility of (0.36 ± 0.04) cm2/V · s. Across an array of 16 transistors, the uniformity of the transconductance is about 9% (1σ), the uniformity of the carrier mobility is about 7%, the uniformity of the threshold voltage is about 4%, the subthreshold slope varies between 95 and 150 mV/decade, and the on/off current ratio varies between 7 × 104 and 3 × 106. To our knowledge, this is the first time that the parameter distribution of submicron-channel-length organic TFTs is reported.
|
|
Darwish, M; Gagliardi, A Modelling and simulation of trap densities in organic thin films Inproceedings 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), S. 89-93, 2017. @inproceedings{8117434,
title = {Modelling and simulation of trap densities in organic thin films}, author = {M Darwish and A Gagliardi}, doi = {10.1109/NANO.2017.8117434}, year = {2017}, date = {2017-07-01}, booktitle = {2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)}, pages = {89-93}, abstract = {Trapping and de-trapping mechanisms play an important role on the performance of organic based devices, hence it is imperative to have a better understanding of such effects both from experimental and theoretical perspectives. We present a simulation model based on resistor networks to investigate the effect of these traps on the output currents in terms of their spatial distributions. Resistor networks are manipulated accordingly on a sub-micron scale to mimic spot illumination from a light source which triggers de-trapping of carriers leading to a change in the current evaluated.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } Trapping and de-trapping mechanisms play an important role on
the performance of organic based devices, hence it is imperative to have a better understanding of such effects both from experimental and theoretical perspectives. We present a simulation model based on resistor networks to investigate the effect of these traps on the output currents in terms of their spatial distributions. Resistor networks are manipulated accordingly on a sub-micron scale to mimic spot illumination from a light source which triggers de-trapping of carriers leading to a change in the current evaluated. |
|
Joshi, S; Bhatt, V D; Wu, H; Becherer, M; Lugli, P IEEE Sensors Journal, 17 (14), S. 4315-4321, 2017, ISSN: 1530-437X. @article{7933216,
title = {Flexible Lactate and Glucose Sensors Using Electrolyte-Gated Carbon Nanotube Field Effect Transistor for Non-Invasive Real-Time Monitoring}, author = {S Joshi and V D Bhatt and H Wu and M Becherer and P Lugli}, doi = {10.1109/JSEN.2017.2707521}, issn = {1530-437X}, year = {2017}, date = {2017-07-01}, journal = {IEEE Sensors Journal}, volume = {17}, number = {14}, pages = {4315-4321}, abstract = {We demonstrate flexible, low cost glucose and lactate sensors using novel enzyme immobilization scheme, primarily aimed toward wearable devices. The intrinsic chemical nature of polyimide films is harnessed to immobilize the enzyme on the polyimide substrate using a dicarboxylic acid. Sensors are fabricated using carbon nanotube as an active channel material. Minimum degradation of the transistor performance is seen after enzyme immobilization. The lowest concentration that can be resolved effectively is in pM range. The sensors demonstrate good sensing ability in the physiological range for wearable and implantable devices. The sensors were re-measured after three weeks and still retain their sensing ability with some decrease in the sensitivity. They also demonstrate good endurance against mechanical deformations.}, keywords = {}, pubstate = {published}, tppubtype = {article} } We demonstrate flexible, low cost glucose and lactate sensors
using novel enzyme immobilization scheme, primarily aimed toward wearable devices. The intrinsic chemical nature of polyimide films is harnessed to immobilize the enzyme on the polyimide substrate using a dicarboxylic acid. Sensors are fabricated using carbon nanotube as an active channel material. Minimum degradation of the transistor performance is seen after enzyme immobilization. The lowest concentration that can be resolved effectively is in pM range. The sensors demonstrate good sensing ability in the physiological range for wearable and implantable devices. The sensors were re-measured after three weeks and still retain their sensing ability with some decrease in the sensitivity. They also demonstrate good endurance against mechanical deformations. |
|
Özbek, S; Digel, J; Grözing, M; Berroth, M; Alavi, G; Burghartz, J N 3-Path 5–6 GHz 0.25 μm SiGe BiCMOS power amplifier on thin substrate Inproceedings 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), S. 49-52, 2017. @inproceedings{7974104,
title = {3-Path 5\textendash6 GHz 0.25 μm SiGe BiCMOS power amplifier on thin substrate}, author = {S \“{O}zbek and J Digel and M Gr\“{o}zing and M Berroth and G Alavi and J N Burghartz}, doi = {10.1109/PRIME.2017.7974104}, year = {2017}, date = {2017-06-01}, booktitle = {2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, pages = {49-52}, abstract = {This paper presents a fully integrated class-A mode Differential Power Amplifier (DPA) on a thin silicon substrate intended for being embedded into flexible electronic foil systems. A high-speed and cost-effective 95 GHz-f_max , 0.25 μm SiGe:C technology (IHP process SGB25V) is used. RF performance of DPA has been evaluated with the pre- and post-thinning measurement results at die level. The behavior of the PA has been optimized for 5-6 GHz frequency band and achieves 10.85 dB and 10 dB small-signal gain at 5.5 GHz before and after thinning, respectively. The measured large signal gain of amplifier at P_in 0 dBm is 10 dB before and 9.4 dB after thinning process. The simulated output referred 1 dB compression point is 10.76 dBm with a PAE of 15%. The PA consumes 50 mA under 1.5 V supply voltage. After thinning process, the supply current is lowered by 3 mA.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents a fully integrated class-A mode
Differential Power Amplifier (DPA) on a thin silicon substrate intended for being embedded into flexible electronic foil systems. A high-speed and cost-effective 95 GHz-f_max , 0.25 μm SiGe:C technology (IHP process SGB25V) is used. RF performance of DPA has been evaluated with the pre- and post-thinning measurement results at die level. The behavior of the PA has been optimized for 5-6 GHz frequency band and achieves 10.85 dB and 10 dB small-signal gain at 5.5 GHz before and after thinning, respectively. The measured large signal gain of amplifier at P_in 0 dBm is 10 dB before and 9.4 dB after thinning process. The simulated output referred 1 dB compression point is 10.76 dBm with a PAE of 15%. The PA consumes 50 mA under 1.5 V supply voltage. After thinning process, the supply current is lowered by 3 mA. |
|
Shabanpour, R; Meister, T; Ishida, K; Boroujeni, B K; Carta, C; Ellinger, F; Petti, L; Münzenrieder, N; Salvatore, G; Tröster, G A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model Inproceedings 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), S. 129-132, 2017. @inproceedings{8010122,
title = {A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model}, author = {R Shabanpour and T Meister and K Ishida and B K Boroujeni and C Carta and F Ellinger and L Petti and N M\“{u}nzenrieder and G Salvatore and G Tr\“{o}ster}, doi = {10.1109/NEWCAS.2017.8010122}, year = {2017}, date = {2017-06-01}, booktitle = {2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)}, pages = {129-132}, abstract = {This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 μm to 50 μm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents a compact transistor model for circuit
design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 μm to 50 μm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz. |
|
Bhatt, V D; Joshi, S; Lugli, P IEEE Transactions on Electron Devices, 64 (3), S. 1375-1379, 2017, ISSN: 0018-9383. @article{7843660,
title = {Metal-Free Fully Solution-Processable Flexible Electrolyte-Gated Carbon Nanotube Field Effect Transistor}, author = {V D Bhatt and S Joshi and P Lugli}, doi = {10.1109/TED.2017.2657882}, issn = {0018-9383}, year = {2017}, date = {2017-03-01}, journal = {IEEE Transactions on Electron Devices}, volume = {64}, number = {3}, pages = {1375-1379}, abstract = {Carbon nanotube-based field effect transistors (CNTFETs) are an interesting alternative to organic FETs in the growing field of printed electronics. Solution processed CNTFETs can be fabricated at low temperatures, are compatible with roll to roll processes and with flexible substrates. Usually metal electrodes for CNTFETs are deposited using standard techniques (e.g., evaporation or sputtering) which require expensive equipment and a high thermal budget. The elimination of such deposition step would allow a fully solution-based process for the CNTFETs fabrication. In this paper, we demonstrate an all carbon nanotube (CNT) transistor which is entirely solution processable without sacrificing the device performance. Performed detailed contact resistance analysis shows that CNT electrodes make better contacts to semiconducting CNTs channel than gold electrodes. The device performance is shown for an electrolyte-gated CNTFET fabricated on a flexible substrate. Such transistors are used as low cost biosensors for vivo implants by exploiting better interaction of flexible substrates to cells.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Carbon nanotube-based field effect transistors (CNTFETs) are
an interesting alternative to organic FETs in the growing field of printed electronics. Solution processed CNTFETs can be fabricated at low temperatures, are compatible with roll to roll processes and with flexible substrates. Usually metal electrodes for CNTFETs are deposited using standard techniques (e.g., evaporation or sputtering) which require expensive equipment and a high thermal budget. The elimination of such deposition step would allow a fully solution-based process for the CNTFETs fabrication. In this paper, we demonstrate an all carbon nanotube (CNT) transistor which is entirely solution processable without sacrificing the device performance. Performed detailed contact resistance analysis shows that CNT electrodes make better contacts to semiconducting CNTs channel than gold electrodes. The device performance is shown for an electrolyte-gated CNTFET fabricated on a flexible substrate. Such transistors are used as low cost biosensors for vivo implants by exploiting better interaction of flexible substrates to cells. |
|
Bhatt, Vijay Deep; Joshi, Saumya; Becherer, Markus; Lugli, Paolo Sensors, 17 (5), 2017, ISSN: 1424-8220. @article{s17051147,
title = {Flexible, Low-Cost Sensor Based on Electrolyte Gated Carbon Nanotube Field Effect Transistor for Organo-Phosphate Detection}, author = {Vijay Deep Bhatt and Saumya Joshi and Markus Becherer and Paolo Lugli}, url = {http://www.mdpi.com/1424-8220/17/5/1147}, doi = {10.3390/s17051147}, issn = {1424-8220}, year = {2017}, date = {2017-01-01}, journal = {Sensors}, volume = {17}, number = {5}, abstract = {A flexible enzymatic acetylcholinesterase biosensor based on an electrolyte-gated carbon nanotube field effect transistor is demonstrated. The enzyme immobilization is done on a planar gold gate electrode using 3-mercapto propionic acid as the linker molecule. The sensor showed good sensing capability as a sensor for the neurotransmitter acetylcholine, with a sensitivity of 5.7 μA/decade, and demonstrated excellent specificity when tested against interfering analytes present in the body. As the flexible sensor is supposed to suffer mechanical deformations, the endurance of the sensor was measured by putting it under extensive mechanical stress. The enzymatic activity was inhibited by more than 70% when the phosphate-buffered saline (PBS) buffer was spiked with 5 mg/mL malathion (an organophosphate) solution. The biosensor was successfully challenged with tap water and strawberry juice, demonstrating its usefulness as an analytical tool for organophosphate detection.}, keywords = {}, pubstate = {published}, tppubtype = {article} } A flexible enzymatic acetylcholinesterase biosensor based on an electrolyte-gated carbon nanotube field effect transistor is demonstrated. The enzyme immobilization is done on a planar gold gate electrode using 3-mercapto propionic acid as the linker molecule. The sensor showed good sensing capability as a sensor for the neurotransmitter acetylcholine, with a sensitivity of 5.7 μA/decade, and demonstrated excellent specificity when tested against interfering analytes present in the body. As the flexible sensor is supposed to suffer mechanical deformations, the endurance of the sensor was measured by putting it under extensive mechanical stress. The enzymatic activity was inhibited by more than 70% when the phosphate-buffered saline (PBS) buffer was spiked with 5 mg/mL malathion (an organophosphate) solution. The biosensor was successfully challenged with tap water and strawberry juice, demonstrating its usefulness as an analytical tool for organophosphate detection.
|
|
Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Widmer, Johannes; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Leo, Karl Organic Power Electronics: Transistor Operation in the kA/cm2 Regime Artikel Scientific Reports, 7 , S. 44713, 2017. @article{Klinger2017,
title = {Organic Power Electronics: Transistor Operation in the kA/cm2 Regime}, author = {Markus P Klinger and Axel Fischer and Felix Kaschura and Johannes Widmer and Bahman Kheradmand-Boroujeni and Frank Ellinger and Karl Leo}, url = {http://dx.doi.org/10.1038/srep44713}, year = {2017}, date = {2017-01-01}, journal = {Scientific Reports}, volume = {7}, pages = {44713}, publisher = {The Author(s)}, keywords = {}, pubstate = {published}, tppubtype = {article} } |
|
Shaygan, Mehrdad; Wang, Zhenxing; Elsayed, Mohamed Saeed; Otto, Martin; Iannaccone, Giuseppe; Ghareeb, Ahmed Hamed; Fiori, Gianluca; Negra, Renato; Neumaier, Daniel High performance metal-insulator-graphene diodes for radio frequency power detection application Artikel Nanoscale, 9 , S. 11944-11950, 2017. @article{C7NR02793A,
title = {High performance metal-insulator-graphene diodes for radio frequency power detection application}, author = {Mehrdad Shaygan and Zhenxing Wang and Mohamed Saeed Elsayed and Martin Otto and Giuseppe Iannaccone and Ahmed Hamed Ghareeb and Gianluca Fiori and Renato Negra and Daniel Neumaier}, url = {http://dx.doi.org/10.1039/C7NR02793A}, doi = {10.1039/C7NR02793A}, year = {2017}, date = {2017-01-01}, journal = {Nanoscale}, volume = {9}, pages = {11944-11950}, publisher = {The Royal Society of Chemistry}, abstract = {Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm-2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V-1, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V W-1 at 2.4 GHz and 1.1 V W-1 at 49.4 GHz.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm-2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V-1, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V W-1 at 2.4 GHz and 1.1 V W-1 at 49.4 GHz.
|
|
Strobel, C; Chavarin, C A; Kitzmann, J; Lupina, G; Wenger, Ch.; Albert, M; Bartha, J W Journal of Applied Physics, 121 (24), S. 245302, 2017. @article{doi:10.1063/1.4987147,
title = {Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes}, author = {C Strobel and C A Chavarin and J Kitzmann and G Lupina and Ch. Wenger and M Albert and J W Bartha}, url = {https://doi.org/10.1063/1.4987147}, doi = {10.1063/1.4987147}, year = {2017}, date = {2017-01-01}, journal = {Journal of Applied Physics}, volume = {121}, number = {24}, pages = {245302}, abstract = {N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.}, keywords = {}, pubstate = {published}, tppubtype = {article} } N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.
|
2016 |
|
Cantarella, G; Ishida, K; Petti, L; Münzenrieder, N; Meister, T; Shabanpour, R; Carta, C; Ellinger, F; Tröster, G; Salvatore, G A Flexible In-Ga-Zn-O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study Artikel IEEE Electron Device Letters, 37 (12), S. 1582-1585, 2016, ISSN: 0741-3106. @article{7604130,
title = {Flexible In-Ga-Zn-O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study}, author = {G Cantarella and K Ishida and L Petti and N M\“{u}nzenrieder and T Meister and R Shabanpour and C Carta and F Ellinger and G Tr\“{o}ster and G A Salvatore}, doi = {10.1109/LED.2016.2619738}, issn = {0741-3106}, year = {2016}, date = {2016-12-01}, journal = {IEEE Electron Device Letters}, volume = {37}, number = {12}, pages = {1582-1585}, abstract = {The quest for high-performance flexible circuits call for scaling of the minimum feature size in thin-film transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic computer-aided design simulations have guided the fabrication of high-performance flexible operational amplifiers (opamps) and logic circuits based on indium-gallium-zinc-oxide TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections have been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50-μm-thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5-mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gain-bandwidth-product increased by 16.9%, for the first one, and propagation delay (tpd) decreased by 43%, for the latter one.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The quest for high-performance flexible circuits call for scaling of the minimum feature size in thin-film transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic computer-aided design simulations have guided the fabrication of high-performance flexible operational amplifiers (opamps) and logic circuits based on indium-gallium-zinc-oxide TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections have been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50-μm-thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5-mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gain-bandwidth-product increased by 16.9%, for the first one, and propagation delay (tpd) decreased by 43%, for the latter one.
|
|
Meister, T; Ishida, K; Shabanpour, R; Boroujeni, B K; Carta, C; Münzenrieder, N; Petti, L; Cantarella, G; Salvatore, G A; Tröster, G; Ellinger, F 20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT Inproceedings ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, S. 79–82, 2016. @inproceedings{Ellinger2016b,
title = {20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT}, author = {T Meister and K Ishida and R Shabanpour and B K Boroujeni and C Carta and N M\“{u}nzenrieder and L Petti and G Cantarella and G A Salvatore and G Tr\“{o}ster and F Ellinger}, doi = {10.1109/ESSCIRC.2016.7598247}, year = {2016}, date = {2016-09-01}, booktitle = {ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, pages = {79–82}, abstract = {This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF $-$3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF $-$3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.
|
|
Ishida, K; Meister, T; Shabanpour, R; Boroujeni, B K; Carta, C; Cantarella, G; Petti, L; Münzenrieder, N; Salvatore, G A; Tröster, G; Ellinger, F Radio frequency electronics in a-IGZO TFT technology Inproceedings 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), S. 273-276, 2016. @inproceedings{7543689,
title = {Radio frequency electronics in a-IGZO TFT technology}, author = {K Ishida and T Meister and R Shabanpour and B K Boroujeni and C Carta and G Cantarella and L Petti and N M\“{u}nzenrieder and G A Salvatore and G Tr\“{o}ster and F Ellinger}, doi = {10.1109/AM-FPD.2016.7543689}, year = {2016}, date = {2016-07-01}, booktitle = {2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)}, pages = {273-276}, abstract = {This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } This paper reviews the recent progress of active
high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented. |
|
Alavi, G; Sailer, H; Richter, H; Albrecht, B; Alshahed, M; Harendt, C; Burghartz, J N Micro-hybrid system in polymer foil based on adaptive layout Inproceedings 2016 6th Electronic System-Integration Technology Conference (ESTC), S. 1–5, 2016. @inproceedings{Burghartz2016,
title = {Micro-hybrid system in polymer foil based on adaptive layout}, author = {G Alavi and H Sailer and H Richter and B Albrecht and M Alshahed and C Harendt and J N Burghartz}, doi = {10.1109/ESTC.2016.7764465}, year = {2016}, date = {2016-01-01}, booktitle = {2016 6th Electronic System-Integration Technology Conference (ESTC)}, pages = {1–5}, abstract = {The micro-hybrid system in foil (HySiF) involves ultra-thin chips embedded and interconnected in polymer foil for diverse flexible electronic applications. In this paper, the concepts and results of wafer level embedding and interconnection of ultra-thin dies in polymers are presented. The significant achievement of the presented HySiF is the accurate interconnection between a pair of functional chips at wafer level based on an adaptive interconnect layout, thus allowing for a small wire pitch on and off the chip. As a result, contact pads can be abandoned from the chip, which leads to reduced silicon area and, thus, lower cost. In addition, misalignment of embedded chips can be compensated by the adaptive layout, thus allowing for far higher I/O count. In this paper, this novel embedding technique is demonstrated with a metal pitch less than 108 $mu$m and for a pair of functional chips spaced in the range of 200-1000 $mu$m.}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } The micro-hybrid system in foil (HySiF) involves ultra-thin chips embedded and interconnected in polymer foil for diverse flexible electronic applications. In this paper, the concepts and results of wafer level embedding and interconnection of ultra-thin dies in polymers are presented. The significant achievement of the presented HySiF is the accurate interconnection between a pair of functional chips at wafer level based on an adaptive interconnect layout, thus allowing for a small wire pitch on and off the chip. As a result, contact pads can be abandoned from the chip, which leads to reduced silicon area and, thus, lower cost. In addition, misalignment of embedded chips can be compensated by the adaptive layout, thus allowing for far higher I/O count. In this paper, this novel embedding technique is demonstrated with a metal pitch less than 108 $mu$m and for a pair of functional chips spaced in the range of 200-1000 $mu$m.
|
|
Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius ACS Combinatorial Science, 18 (4), S. 188-194, 2016, (PMID: 27004935). @article{Grundmann2016a,
title = {Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition}, author = {Sofie Bitter and Peter Schlupp and Michael Bonholzer and Holger von Wenckstern and Marius Grundmann}, url = {http://dx.doi.org/10.1021/acscombsci.5b00179}, doi = {10.1021/acscombsci.5b00179}, year = {2016}, date = {2016-01-01}, journal = {ACS Combinatorial Science}, volume = {18}, number = {4}, pages = {188-194}, abstract = {Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08\textendash0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm2 glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 1020 to 1016 cm\textendash3 by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).}, note = {PMID: 27004935}, keywords = {}, pubstate = {published}, tppubtype = {article} } Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08–0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm2 glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 1020 to 1016 cm–3 by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).
|
|
Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; von Wenckstern, Holger Oxide bipolar electronics: materials, devices and circuits Artikel Journal of Physics D: Applied Physics, 49 (21), S. 213001, 2016. @article{Grundmann2016b,
title = {Oxide bipolar electronics: materials, devices and circuits}, author = {Marius Grundmann and Fabian Kl\“{u}pfel and Robert Karsthof and Peter Schlupp and Friedrich-Leonhard Schein and Daniel Splith and Chang Yang and Sofie Bitter and Holger von Wenckstern}, url = {http://stacks.iop.org/0022-3727/49/i=21/a=213001}, year = {2016}, date = {2016-01-01}, journal = {Journal of Physics D: Applied Physics}, volume = {49}, number = {21}, pages = {213001}, publisher = {IOP Publishing}, abstract = {We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization.}, keywords = {}, pubstate = {published}, tppubtype = {article} } We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization.
|
|
Klinger, M P; Dollinger, F; Fischer, A; Kaschura, F; Widmer, J; Leo, K Organic permeable base transistors for flexible and electronic circuits Sonstige Poster at ICOE 2016, published in Science Open Posters, 2016. @misc{Klinger2016,
title = {Organic permeable base transistors for flexible and electronic circuits}, author = {M P Klinger and F Dollinger and A Fischer and F Kaschura and J Widmer and K Leo}, doi = {10.14293/P2199-8442.1.SOP-PHYS.PIRZBG.v1}, year = {2016}, date = {2016-01-01}, abstract = {Organic Permeable Base Transistors (OPBT) with C60 as a small-molecule semiconductor show impressive characteristics due to their short vertical channel in the range of 100 nm. Current densities exceeding 10 A/cm² and large on/off ratios have recently been published for samples processed on glass. [1] The outstanding frequency behavior that allows for operation in the MHz-regime at a low operation voltage makes OPBTs attractive for applications in wireless communication while allowing simple processing in a single vacuum evaporation tool without the need for expensive structuring like µm range lithography. Our current work aims at processing these devices on flexible plastic substrates. Transistor and circuit operation in real application scenarios require air-stability, which necessitates encapsulation. We employ AlOx thin-films from Atomic Layer Deposition (ALD) to protect OPBTs from external degradation to facilitate long-term stable, flexible, organic electronics. The easy structuring and the high-current capability of our transistors will enable versatile applications like for instance wireless communication, flexible displays or sensor applications with a technology that allows for low cost production. [1] Klinger, M. P.; Fischer, A.; Kaschura, F.; Scholz, R.; L\“{u}ssem, B.; Kheradmand-Boroujeni, B.; Ellinger, F.; Kasemann, D. & Leo, K. Advanced Materials, 2015, 27, 7734\textendash7739}, howpublished = {Poster at ICOE 2016, published in Science Open Posters}, keywords = {}, pubstate = {published}, tppubtype = {misc} } Organic Permeable Base Transistors (OPBT) with C60 as a small-molecule semiconductor show impressive characteristics due to their short vertical channel in the range of 100 nm. Current densities exceeding 10 A/cm² and large on/off ratios have recently been published for samples processed on glass. [1] The outstanding frequency behavior that allows for operation in the MHz-regime at a low operation voltage makes OPBTs attractive for applications in wireless communication while allowing simple processing in a single vacuum evaporation tool without the need for expensive structuring like µm range lithography. Our current work aims at processing these devices on flexible plastic substrates. Transistor and circuit operation in real application scenarios require air-stability, which necessitates encapsulation. We employ AlOx thin-films from Atomic Layer Deposition (ALD) to protect OPBTs from external degradation to facilitate long-term stable, flexible, organic electronics. The easy structuring and the high-current capability of our transistors will enable versatile applications like for instance wireless communication, flexible displays or sensor applications with a technology that allows for low cost production. [1] Klinger, M. P.; Fischer, A.; Kaschura, F.; Scholz, R.; Lüssem, B.; Kheradmand-Boroujeni, B.; Ellinger, F.; Kasemann, D. & Leo, K. Advanced Materials, 2015, 27, 7734–7739
|
Publications
2019 |
|
5–31-Hz 188-µW Light-Sensing Oscillator With Two Active Inductors Fully Integrated on Plastic Artikel IEEE Journal of Solid-State Circuits, 54 (8), S. 2195-2206, 2019, ISSN: 0018-9200. |
|
Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs Artikel IEEE Transactions on Electron Devices, 66 (8), S. 3376-3381, 2019, ISSN: 0018-9383. |
|
Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs Inproceedings 2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), S. 1-3, 2019. |
|
Evaluation of the Beyond- fT Operation of an IGZO TFT-Based RF Self-Mixing Circuit Artikel IEEE Microwave and Wireless Components Letters, 29 (2), S. 119-121, 2019, ISSN: 1531-1309. |
|
Hybrid Systems-in-Foil -Combining the Merits of Thin Chips and of Large-Area Electronics Artikel IEEE Journal of the Electron Devices Society, S. 1-1, 2019, ISSN: 2168-6734. |
|
High-Accuracy Localization and Calibration for 5-DoF Indoor Magnetic Positioning Systems Artikel IEEE Transactions on Instrumentation and Measurement, S. 1-11, 2019, ISSN: 0018-9456. |
|
Solution Shearing of a High-Capacitance Polymer Dielectric for Low-Voltage Organic Transistors Artikel Advanced Electronic Materials, 5 (6), S. 1900067, 2019. |
|
Advanced Theory and Simulations, 2 (1), S. 1800114, 2019. |
|
Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors Artikel ECS Transactions, 90 (1), S. 55-63, 2019. |
2018 |
|
A Flexible Approach Towards Silicon-Graphene Heterojunction Transistors Inproceedings 2018 48th European Microwave Conference (EuMC), S. 729–732, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). |
|
Fundamental Science in RF-Engineering and Funding Opportunities in Germany — The Role of the German Research Foundation in Inproceedings 2018 48th European Microwave Conference (EuMC), S. 728, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). |
|
Study of Graphene Flexible Electronics for Microwave Application Inproceedings 2018 48th European Microwave Conference (EuMC), S. 733–736, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). |
|
RF Characterization and De-Embedding of Parasitic Device Interconnects in a Metal-Oxide TFT Technology Inproceedings 2018 48th European Microwave Conference (EuMC), S. 741–744, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). |
|
Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems Inproceedings 2018 48th European Microwave Conference (EuMC), S. 737–740, 2018, (EuMC37 : Special Session: High Frequency Flexible Bendable Electronics for Wireless Communication Systems, Chair: Frank Ellinger, Co-Chair: Tilo Meister). |
|
IEEE Transactions on Electron Devices, 65 (9), S. 3796-3802, 2018, ISSN: 0018-9383. |
|
Hybrid Systems-in-Foil – Combining Thin Chips with Large-Area Electronics Inproceedings 2018 International Flexible Electronics Technology Conference (IFETC), S. 1-6, 2018. |
|
Metal–Insulator–Graphene Diode Mixer Based on CVD Graphene-on-Glass Artikel IEEE Electron Device Letters, 39 (7), S. 1104-1107, 2018, ISSN: 0741-3106. |
|
Simulation of Enhanced Exciton Diffusion in Organic Solar Cells with Phosphorescent Sensitizers Inproceedings 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), S. 420-425, 2018, ISSN: 1944-9380. |
|
Phys. Rev. Applied, 9 , S. 064001, 2018. |
|
Bendable Printed and Thin-film Electronics for Wireless Communications Inproceedings Second URSI Atlantic Radio Science Meeting – 2018 (URSI AT-RASC), Gran Canaria, 28 May – 1 June 2018, 2018. |
|
Adaptive Layout Technique for Microhybrid Integration of Chip-Film Patch Artikel IEEE Transactions on Components, Packaging and Manufacturing Technology, 8 (5), S. 802-810, 2018, ISSN: 2156-3950. |
|
Phys. Chem. Chem. Phys., S. -, 2018. |
|
IEEE Transactions on Microwave Theory and Techniques, PP (99), S. 1-7, 2018, ISSN: 0018-9480. |
|
Graphene integrated circuits: new prospects towards receiver realisation Artikel Nanoscale, 10 , S. 93-99, 2018. |
|
Influence of acceptor on charge mobility in stacked π-conjugated polymers Artikel Chemical Physics, 501 , S. 8 – 14, 2018, ISSN: 0301-0104. |
|
3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications Artikel Integration, 63 , S. 291 – 298, 2018, ISSN: 0167-9260. |
|
Understanding the influence of in-plane gate electrode design on electrolyte gated transistor Artikel Microelectronic Engineering, 199 , S. 87 – 91, 2018, ISSN: 0167-9317. |
|
Scientific Reports, 8 (1), S. 11386–, 2018, ISSN: 2045-2322. |
|
High-Mobility, Solution-Processed Organic Field-Effect Transistors from C8-BTBT:Polystyrene Blends Artikel Advanced Electronic Materials, 4 (8), S. 1800076, 2018. |
|
Generalized Kinetic Monte Carlo Framework for Organic Electronics Artikel Algorithms, 11 (4), 2018, ISSN: 1999-4893. |
2017 |
|
3–5 V, 3–3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter Inproceedings 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), S. 1-4, 2017. |
|
Program FFlexCom – High frequency flexible bendable electronics for wireless communication systems Inproceedings 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), S. 1-6, 2017. |
|
Millimeter-wave graphene-based varactor for flexible electronics Inproceedings 2017 12th European Microwave Integrated Circuits Conference (EuMIC), S. 117-120, 2017. |
|
IEEE Transactions on Nanotechnology, 16 (5), S. 837-841, 2017, ISSN: 1536-125X. |
|
Modelling and simulation of trap densities in organic thin films Inproceedings 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), S. 89-93, 2017. |
|
IEEE Sensors Journal, 17 (14), S. 4315-4321, 2017, ISSN: 1530-437X. |
|
3-Path 5–6 GHz 0.25 μm SiGe BiCMOS power amplifier on thin substrate Inproceedings 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), S. 49-52, 2017. |
|
A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model Inproceedings 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS), S. 129-132, 2017. |
|
IEEE Transactions on Electron Devices, 64 (3), S. 1375-1379, 2017, ISSN: 0018-9383. |
|
Sensors, 17 (5), 2017, ISSN: 1424-8220. |
|
Organic Power Electronics: Transistor Operation in the kA/cm2 Regime Artikel Scientific Reports, 7 , S. 44713, 2017. |
|
High performance metal-insulator-graphene diodes for radio frequency power detection application Artikel Nanoscale, 9 , S. 11944-11950, 2017. |
|
Journal of Applied Physics, 121 (24), S. 245302, 2017. |
2016 |
|
Flexible In-Ga-Zn-O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study Artikel IEEE Electron Device Letters, 37 (12), S. 1582-1585, 2016, ISSN: 0741-3106. |
|
20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT Inproceedings ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, S. 79–82, 2016. |
|
Radio frequency electronics in a-IGZO TFT technology Inproceedings 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), S. 273-276, 2016. |
|
Micro-hybrid system in polymer foil based on adaptive layout Inproceedings 2016 6th Electronic System-Integration Technology Conference (ESTC), S. 1–5, 2016. |
|
ACS Combinatorial Science, 18 (4), S. 188-194, 2016, (PMID: 27004935). |
|
Oxide bipolar electronics: materials, devices and circuits Artikel Journal of Physics D: Applied Physics, 49 (21), S. 213001, 2016. |
|
Organic permeable base transistors for flexible and electronic circuits Sonstige Poster at ICOE 2016, published in Science Open Posters, 2016. |