@article{Grundmann2016bb,
title = {Ring Oscillators Based on ZnO Channel JFETs and MESFETs},
author = {Fabian J Kl\“{u}pfel and Holger von Wenckstern and Marius Grundmann},
url = {http://dx.doi.org/10.1002/aelm.201500431},
doi = {10.1002/aelm.201500431},
issn = {2199-160X},
year = {2016},
date = {2016-01-01},
journal = {Advanced Electronic Materials},
volume = {2},
number = {7},
pages = {1500431–n/a},
publisher = {Wiley Online Library},
abstract = {Ring oscillator circuits based on junction field-effect transistors as well as metal\textendashsemiconductor field-effect transistors with ZnO channels are presented. Single stage delay times down to 110 ns are observed. The experimental oscillation frequencies are related to easily measurable device properties by a simple analytical model. This work proves the feasibility of low power oxide based circuits with Schottky diode and bipolar (pn-) diode gates since both approaches provide significantly lower operation voltages at similar frequencies compared to previously reported oxide thin film transistors based on insulating gates.},
note = {1500431},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{BarthaWenger2016,
title = {Plasma-enhanced chemical vapor deposition of amorphous Si on graphene},
author = {G Lupina and C Strobel and J Dabrowski and G Lippert and J Kitzmann and H M Krause and C Wenger and M Lukosius and A Wolff and M Albert and J W Bartha},
url = {http://dx.doi.org/10.1063/1.4948978},
doi = {10.1063/1.4948978},
year = {2016},
date = {2016-01-01},
journal = {Applied Physics Letters},
volume = {108},
number = {19},
pages = {193105},
publisher = {AIP Publishing},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@inproceedings{Ellinger2016a,
title = {3.5mW 1MHz AM detector and digitally-controlled tuner in a-IGZO TFT for wireless communications in a fully integrated flexible system for audio bag},
author = {T Meister and K Ishida and C Carta and R Shabanpour and B K Boroujeni and N M\“{u}nzenrieder and L Petti and G A Salvatore and G Schmidt and P Ghesquiere and S Kiefl and De G Toma and T Faetti and A C H\“{u}bler and G Tr\“{o}ster and F Ellinger},
doi = {10.1109/VLSIC.2016.7573508},
year = {2016},
date = {2016-01-01},
booktitle = {2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)},
pages = {1–2},
abstract = {We developed a fully flexible AM (amplitude modulation) radio receiver suitable for integration in an textquotedblleftaudio bagtextquotedblright, by exploiting the heterogeneous integration of several fully flexible technologies. In this paper, we present a 2.9 mW 2-bit digitally-controlled tuner with a 576 kHz tuning range, a 3.5 mW 1 MHz AM detector and their integration in such a fully-flexible system. Their optimized power consumptions are essential because thin flexible batteries and organic solar cells serve as power supply. The circuits are fabricated in a low-temperature amorphous indium gallium zinc oxide (a-IGZO) technology. For the system integration textile techniques as well as flexible inkjet-printed packages and printed circuit boards (IPCBs) were used.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}

@article{doi:10.1063/1.4953034,
title = {Metal oxide semiconductor thin-film transistors for flexible electronics},
author = {Luisa Petti and Niko M\“{u}nzenrieder and Christian Vogt and Hendrik Faber and Lars B\“{u}the and Giuseppe Cantarella and Francesca Bottacchi and Thomas D Anthopoulos and Gerhard Tr\“{o}ster},
url = {https://doi.org/10.1063/1.4953034},
doi = {10.1063/1.4953034},
year = {2016},
date = {2016-01-01},
journal = {Applied Physics Reviews},
volume = {3},
number = {2},
pages = {021303},
abstract = {The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow’s electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{Neumaier2016a,
title = {Encapsulated graphene-based Hall sensors on foil with increased sensitivity},
author = {Zhenxing Wang and Luca Banszerus and Martin Otto and Kenji Watanabe and Takashi Taniguchi and Christoph Stampfer and Daniel Neumaier},
url = {http://dx.doi.org/10.1002/pssb.201600224},
doi = {10.1002/pssb.201600224},
issn = {1521-3951},
year = {2016},
date = {2016-01-01},
journal = {physica status solidi (b)},
volume = {253},
number = {12},
pages = {2316–2320},
publisher = {Wiley Online Library},
abstract = {The encapsulation of graphene-based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT, respectively, which are the highest reported sensitivity values for Hall sensors on foil so far.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{Neumaier2016b,
title = {Flexible Hall sensors based on graphene},
author = {Zhenxing Wang and Mehrdad Shaygan and Martin Otto and Daniel Schall and Daniel Neumaier},
url = {http://dx.doi.org/10.1039/C5NR08729E},
doi = {10.1039/C5NR08729E},
year = {2016},
date = {2016-01-01},
journal = {Nanoscale},
volume = {8},
pages = {7683-7687},
publisher = {The Royal Society of Chemistry},
abstract = {The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 [small mu ]m thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. Voltage and current normalized sensitivities of up to 0.096 V VT-1 and 79 V AT-1 were measured, respectively. These values are comparable to the sensitivity of rigid silicon based Hall sensors and are the highest values reported so far for any flexible Hall sensor devices. The sensitivity of the Hall sensor shows no degradation after being bent to a minimum radius of 4 mm, which corresponds to a tensile strain of 0.6%, and after 1000 bending cycles to a radius of 5 mm.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@inproceedings{7369178,
title = {Radio frequency electronics on plastic},
author = {F Ellinger and K Ishida and R Shabanpour and T Meister and B K Boroujeni and C Carta and L Petti and G A Salvatore and G Tr\“{o}ster and N M\“{u}nzenrieder},
doi = {10.1109/IMOC.2015.7369178},
year = {2015},
date = {2015-11-01},
booktitle = {2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)},
pages = {1-5},
abstract = {In this paper the recent progress of active high frequency
electronics on plastic is discussed. This technology is mechanically
flexible, bendable, stretchable and does not need any rigid chips.
Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply
and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a
measured transit frequency of 138 MHz. Our scalable TFT compact
simulation model shows good agreement with measurements. To achieve a
sufficiently high yield, TFTs with gate lengths of around 5 μm are used
for the circuit design. A Cherry Hopper amplifier with 3.5 MHz
bandwidth, 10 dB gain and 5 mW dc power is presented. The fully
integrated receiver covering a plastic foil area of 3 × 9 mm^2 includes
a four stage cascode amplifier, an amplitude detector, a baseband
amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a
bandwidth of 2 – 20 MHz and a gain beyond 15 dB were measured. Finally,
an outlook regarding future advancements of high frequency electronics
on plastic is given.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}